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Prof Huiyun Liu

PhD

Professor of Semiconductor Photonics

Room 915, Roberts Building, UCL

Address:Department of Electronic & Electrical Engineering
University College London
Torrington Place
London
WC1E 7JE
Research Group:Photonics
Personal Web Page:http://www.ee.ucl.ac.uk/~hliu
E-mail: h.liu@ee.ucl.ac.uk
Telephone: +44 (0)20 7679 3983 / 33983 (internal)  
Fax:+44 (0)20 7388 9325

Huiyun Liu received the Ph.D. in Semiconductor Science from the Institute of Semiconductor, Chinese Academy of Sciences. After receiving his PhD, he joined the EPSRC National Centre for III-V Technologies at University of Sheffield in August 2001. He was responsible for the development of Molecular Beam Epitaxy growth of semiconductor materials for the UK academic and industrial research community. In 2007, he was awarded Royal Society University Research Fellow and started his academic career in the Department of Electronic and Electrical Engineering at UCL as a Senior Lecturer.

He has co-authored over 100 peer-reviewed journal papers in the area of semiconductor materials and devices. His general interest concentrates on the nanometre-scale engineering of low-dimensional semiconductor structures (such as quantum dots, quantum wires, and quantum wells) by using molecular beam epitaxy and the development of novel optoelectronic devices including lasers, detectors, and modulators by developing novel device process techniques.

Research areas of interest include:

  • Molecular Beam Epitaxy
  • Growth and Fabrication of III-V materials and devices, in particular quantum-dot materials and devices
  • Semiconductor physics in opto-electronic materials and devices
  • Semiconductor III-V device process
  • Silicon photonics

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Number of items: 187.

2014

Chen, S; Tang, M; Jiang, Q; Wu, J; Dorogan, VG; Benamara, M; ... Liu, H; + view all (2014) InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate. ACS Photonics , 1 (7) 638 - 642. 10.1021/ph500162a. Green and gold open access
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Jiang, Q; Tang, M; Chen, S; Wu, J; Seeds, A; Liu, H; (2014) InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate. Optics Express , 22 (19) 23242 - 23248. 10.1364/OE.22.023242.

Lam, P; Hatch, S; Wu, J; Tang, M; Dorogan, VG; Mazur, YI; ... Liu, H; + view all (2014) Voltage recovery in charged InAs/GaAs quantum dot solar cells. NANO ENERGY , 6 159 - 166. 10.1016/j.nanoen.2014.03.016. Green and gold open access
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Lam, P; Wu, J; Tang, M; Jiang, Q; Hatch, S; Beanland, R; ... Liu, H; + view all (2014) Submonolayer InGaAs/GaAs quantum dot solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS , 126 83 - 87. 10.1016/j.solmat2014.03.046.

Sourribes, MJL; Isakov, I; Panfilova, M; Liu, H; Warburton, PA; (2014) Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon. NANO LETTERS , 14 (3) 1643 - 1650. 10.1021/nl5001554.

Tang, M; Chen, S; Wu, J; Jiang, Q; Dorogan, VG; Benamara, M; ... Liu, H; + view all (2014) 1.3-mu m InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. OPTICS EXPRESS , 22 (10) 11528 - 11535. 10.1364/OE.22.011528. Gold open access

Tutu, FKK; (2014) InAs/GaAs Quantum Dot Solar Cells. Doctoral thesis, UCL (University College London).

Ward, T; Sanchez, AM; Tang, M; Wu, J; Liu, H; Dunstan, DJ; Beanland, R; (2014) Design rules for dislocation filters. JOURNAL OF APPLIED PHYSICS , 116 (6) , Article ARTN 063508. 10.1063/1.4892162.

Wu, J; Lee, A; Jiang, Q; Tang, M; Seeds, AJ; Liu, H; (2014) Electrically pumped continuous-wave 1.3-mu m InAs/GaAs quantum dot lasers monolithically grown on Si substrates. IET OPTOELECTRONICS , 8 (2) 20 - 24. 10.1049/iet-opt.2013.0093.

Wu, J; Li, Y; Kubota, J; Domen, K; Aagesen, M; Ward, T; ... Liu, H; + view all (2014) Wafer-Scale Fabrication of Self-Catalyzed 1.7 eV GaAsP Core-Shell Nanowire Photocathode on Silicon Substrates. Nano Letters , 14 (4) pp. 2013-2018. 10.1021/nl500170m. Green and gold open access
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Zhang, Y; Wu, J; Aagesen, M; Holm, J; Hatch, S; Tang, M; ... Liu, H; + view all (2014) Self-Catalyzed Ternary Core-Shell GaAsP Nanowire Arrays Grown on Patterned Si Substrates by Molecular Beam Epitaxy. NANO LETTERS , 14 (8) 4542 - 4547. 10.1021/nl501565b.

2013

Holm, JV; Jørgensen, HI; Krogstrup, P; Nygård, J; Liu, H; Aagesen, M; (2013) Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon. Nature Communications , 4 1498 - 1498. 10.1038/ncomms2510.

Lee, A; Jiang, Q; Wang, T; Tang, M; Seeds, A; Liu, H; (2013) III-V quantum-dot laser growth on silicon and germanium. In: Optical Fiber Communication Conference, OFC 2013.

Lee, A; Liu, H; Seeds, A; (2013) Semiconductor III-V lasers monolithically grown on Si substrates. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 28 (1) , Article ARTN 015027. 10.1088/0268-1242/28/1/015027.

Lee, A; Tang, M; Jiang, Q; Wu, J; Seeds, A; Liu, H; (2013) InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics. In: 2013 IEEE Photonics Conference, IPC 2013. (pp. 474 - 475).

Lee, AD; Jiang, Q; Tang, M; Zhang, Y; Seeds, AJ; Liu, H; (2013) InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , 19 (4) , Article ARTN 1901107. 10.1109/JSTQE.2013.2247979.

Luxmoore, IJ; Toro, R; Del Pozo-Zamudio, O; Wasley, NA; Chekhovich, EA; Sanchez, AM; ... Tartakovskii, AI; + view all (2013) III-V quantum light source and cavity-QED on Silicon. SCIENTIFIC REPORTS , 3 , Article ARTN 1239. 10.1038/srep01239. Gold open access

Sandall, IC; Ng, JS; David, JPR; Liu, H; Tan, CH; (2013) Evaluation of InAs quantum dots on Si as optical modulator. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 28 (9) , Article ARTN 094002. 10.1088/0268-1242/28/9/094002.

Tutu, FK; Lam, P; Wu, J; Miyashita, N; Okada, Y; Lee, K-H; ... Liu, H; + view all (2013) InAs/GaAs quantum dot solar cell with an AlAs cap layer. APPLIED PHYSICS LETTERS , 102 (16) , Article ARTN 163907. 10.1063/1.4803459.

Tutu, FK; Wu, J; Lam, P; Tang, M; Miyashita, N; Okada, Y; ... Liu, H; + view all (2013) Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells. APPLIED PHYSICS LETTERS , 103 (4) , Article ARTN 043901. 10.1063/1.4816503.

Zhang, Y; Aagesen, M; Holm, JV; Jorgensen, HI; Wu, J; Liu, H; (2013) Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy. NANO LETTERS , 13 (8) 3897 - 3902. 10.1021/nl401981u.

2012

Gradkowski, K; Ochalski, TJ; Pavarelli, N; Liu, HY; Tatebayashi, J; Williams, DP; ... Huffaker, DL; + view all (2012) Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems. PHYSICAL REVIEW B , 85 (3) , Article ARTN 035432. 10.1103/PhysRevB.85.035432.

Jr, CODD; Sercombe, D; Puebla, J; Otubo, L; Luxmoore, IJ; Sich, M; ... Tartakovskii, AI; + view all (2012) Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon. NANO LETTERS , 12 (10) 5269 - 5274. 10.1021/nl302490y.

Pavarelli, N; Ochalski, TJ; Liu, HY; Gradkowski, K; Schmidt, M; Williams, DP; ... Huyet, G; + view all (2012) Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots. APPLIED PHYSICS LETTERS , 101 (23) , Article ARTN 231109. 10.1063/1.4769431.

Sandall, I; Ng, JS; David, JPR; Tan, CH; Wang, T; Liu, H; (2012) 1300 nm wavelength InAs quantum dot photodetector grown on silicon. OPTICS EXPRESS , 20 (10) 10446 - 10452. 10.1364/OE.20.010446. Gold open access

Seeds, AJ; Rouvalis, E; Natrella, M; Liu, H; Chtioui, M; van Dijk, F; Carpintero, G; (2012) High efficiency THz photodetectors. In: (Proceedings) European Conference on Integrated Optics.

Tutu, FK; Sellers, IR; Peinado, MG; Pastore, CE; Willis, SM; Watt, AR; ... Liu, HY; + view all (2012) Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer. JOURNAL OF APPLIED PHYSICS , 111 (4) , Article ARTN 046101. 10.1063/1.3686184.

Wang, T; Lee, A; Tutu, F; Seeds, A; Liu, H; Jiang, Q; ... Hogg, R; + view all (2012) The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates. APPLIED PHYSICS LETTERS , 100 (5) , Article ARTN 052113. 10.1063/1.3682314.

Willis, SM; Dimmock, JAR; Tutu, F; Liu, HY; Peinado, MG; Assender, HE; ... Sellers, IR; + view all (2012) Defect mediated extraction in InAs/GaAs quantum dot solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS , 102 142 - 147. 10.1016/j.solmat.2012.03.010.

Zhou, KJ; Jiang, Q; Zhang, ZY; Chen, SM; Liu, HY; Lu, ZH; ... Hogg, RA; + view all (2012) Quantum dot selective area intermixing for broadband light sources. OPTICS EXPRESS , 20 (24) 26950 - 26957. 10.1364/OE.20.026950. Gold open access

2011

LIU, H; Wang, T; Jiang, Q; Hogg, R; Tutu, F; Pozzi, F; Seeds, A; (2011) Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nature Photonics , 5 416 - 419. 10.1038/nphoton.2011.120.

Wang, T; Liu, H; Lee, A; Pozzi, F; Seeds, A; (2011) 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Opt. Express , 19 , Article 12. 10.1364/OE.19.011381.

2010

Chen, R; LIU, H; Sun, H; (2010) Carrier Relaxation in InAs/InGaAs Dots-in-a-Well Structures. JAPANESE JOURNAL OF APPLIED PHYSICS , 49 (2) , Article 020203. 10.1143/JJAP.49.020203.

Chen, R; Liu, HY; Sun, HD; (2010) Interband optical transitions of an InAs/InGaAs dots-in-a-well structure. SOLID STATE COMMUNICATIONS , 150 (15-16) 707 - 710. 10.1016/j.ssc.2010.01.042.

Chen, R; Liu, HY; Sun, HD; (2010) Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy. JOURNAL OF APPLIED PHYSICS , 107 (1) , Article ARTN 013513. 10.1063/1.3277049.

2009

Childs, D; Groom, K; Ray, S; LIU, H; Hopkinson, M; Hogg, R; (2009) Flat-topped emission centred at 1 250 nm from quantum dot superluminescent diodes. South African Journal of Science , 105 (7-8) pp. 276-277. Green and gold open access
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Jang, YD; Park, J; Lee, D; Mowbray, DJ; Skolnick, MS; Liu, HY; ... Hogg, RA; + view all (2009) Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots. APPLIED PHYSICS LETTERS , 95 (17) , Article ARTN 171902. 10.1063/1.3255017.

Nabavi, E; Badcock, TJ; Nuytten, T; Liu, HY; Hopkinson, M; Moshchalkov, VV; Mowbray, DJ; (2009) Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots. JOURNAL OF APPLIED PHYSICS , 105 (5) , Article ARTN 053512. 10.1063/1.3082012.

Ramsay, AJ; Boyle, SJ; Godden, TM; Kolodka, RS; Khatab, AFA; Oliveira, JBB; ... Skolnick, MS; + view all (2009) Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole. SOLID STATE COMMUN , 149 (35-36) 1458 - 1465. 10.1016/j.ssc.2009.04.043.

Zibik, EA; Grange, T; Carpenter, BA; Porter, NE; Ferreira, R; Bastard, G; ... Wilson, LR; + view all (2009) Long lifetimes of quantum-dot intersublevel transitions in the terahertz range. Nature Materials , 8 (10) 803 - 807. 10.1038/NMAT2511.

2008

Beanland, R; Sánchez, AM; Childs, D; Groom, KM; Liu, HY; Mowbray, DJ; Hopkinson, M; (2008) Structural analysis of life tested 1.3 µm quantum dot lasers. Journal of Applied Physics , 103 (1) 014913 - ?. 10.1063/1.2827451.

Boyle, SJ; Ramsay, AJ; Bello, F; Fox, AM; Skolnick, MS; Liu, HY; Hopkinson, M; (2008) Two-qubit conditional quantum-logic operation in a single self-assembled quantum dot. Physical Review B - Condensed Matter and Materials Physics , 78 (7) 10.1103/PhysRevB.78.075301.

Boyle, SJ; Ramsay, AJ; Fox, AM; Skolnick, MS; Liu, HY; Hopkinson, M; (2008) Controlled-rotation quantum logic gate in a single self-assembled quantum dot. In: Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.

Hasbullah, HF; Ng, JS; Liu, HY; Hopkinson, M; David, JPR; Badcock, TJ; ... Beanland, R; + view all (2008) Effects of spacer growth temperature on the optical properties of quantum dot laser structures. In: Proceedings of SPIE. (pp. U8000 - ?). SPIE - The International Society for Optical Engineering: Bellingham, US.

Jang, YD; Badcock, TJ; Mowbray, DJ; Skolnick, MS; Park, J; Lee, D; ... and Andreev, AD; + view all (2008) Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots. Applied Physics Letters , 93 (10) 101903 - ?. 10.1063/1.2975961.

Jang, YD; Badcock, TJ; Mowbray, DJ; Skolnick, MS; Park, J; Lee, D; ... and Hopkinson, M; + view all (2008) Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer. Applied Physics Letters , 92 251905 - ?. 10.1063/1.2949741.

Jin, CY; Liu, HY; Groom, KM; Jiang, Q; Hopkinson, M; (2008) Effects of photon and thermal coupling mechanism on self-assembled InAs/GaAs quantum dot lasers. In: (Proceedings) One day quantum dot meeting. : Blackett Laboratory, Imperial College London.

Jin, CY; Liu, HY; Jiang, Q; Hopkinson, M; and Wada, O; (2008) Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels. Applied Physics Letters , 93 161103 - ?.

Jin, CY; Liu, HY; Zhang, SY; Hopkinson, M; (2008) Low-Threshold 1.3-μm GaInNAs Quantum-Well Lasers Using Quaternary-Barrier Structures. IEEE PHOTONICS TECHNOLOGY LETTERS , 20 (11) 942 - 944. 10.1109/LPT.2008.922914.

Lenz, A; Eisele, H; Timm, R; Ivanova, L; Liu, HY; Hopkinson, M; ... Daehne, M; + view all (2008) Structure of InAs quantum dots-in-a-well nanostructures. Physica E: Low-dimensional Systems and Nanostructures , 40 (6) 1988 - 1990. 10.1016/j.physe.2007.09.041.

Liu, HY; Hopkinson, M; Groom, K; Hogg, RA; and Mowbray, DJ; (2008) High-performance 1300-nm InAs/GaAs quantum-dot lasers. In: Alexey, ABAPMS, (ed.) (Proceedings) Novel In-Plane Semiconductor Lasers VII. (pp. 690903 - ?). SPIE: San Jose, CA, USA.

Liu, HY; Qiu, Y; Jin, CY; Walther, T; Cullis, AG; (2008) 1.55 µm InAs quantum dots grown on a GaAs substrate using a GaAsSb metamorphic buffer layer. Applied Physics Letters , 92 (11) 111906 - ?. 10.1063/1.2898895.

Liu, HY; Qiu, Y; Jin, CY; Walther T, C; A, G; (2008) 1.55-μm InAs quantum dots grown on GaAsSb/GaAs metamorphic buffer layer. In: (Proceedings) The 15th International Conference on Molecular Beam Epitaxy. : The University of British Columbia, Vancouver Canada.

Makhonin, MN; Tartakovskii, AI; Van'kov, AB; Drouzas, I; Wright, T; Skiba-Szymanska, J; ... Hopkinson, M; + view all (2008) Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots. Physical Review B , 77 (12) 125307 - ?. 10.1103/PhysRevB.77.125307.

Ramsay, AJ; Boyle, SJ; Kolodka, RS; Fox, AM; Skolnick, MS; Liu, HY; (2008) Sequential preparation, optical control, and detection of single quantum dot hole spin. In: Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series.

Ramsay, AJ; Boyle, SJ; Kolodka, RS; Oliveira, JBB; Skiba-Szymanska, J; Fox, AM; ... Hopkinson, M; + view all (2008) Fast optical preparation, control, and readout of a single quantum dot spin. Physical Review Letters , 100 (19) , Article 197401 . 10.1103/PhysRevLett.100.197401. Green and gold open access
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Smowton, PM; George, A; Sandall I C, H; M, L; H,; (2008) Origin of temperature-dependent threshold current in p-doped and undoped In(Ga)As quantum dot lasers. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , 14 (4) 1162 - ?.

2007

Aivaliotis, P; Wilson, LR; Zibik, EA; Cockburn, JW; Steer, MJ; Liu, HY; (2007) Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony. Applied Physics Letters , 91 (1) 013503 - ?. 10.1063/1.2753727.

Alexander, RR; Childs, DTD; Agarwal, H; Groom, KM; Liu, HYH; M, H; ... D, J; + view all (2007) Systematic study of the. effects of modulation p-doping on 1.3-μm quantum-dot lasers. IEEE Journal of Quantum Electronics , 43 (11-12) 1129 - ?. 10.1109/JQE.2007.907213.

Alexander, RR; Childs D, AH; Groom K M, LHY; Hopkinson, M; Hogg, RA; (2007) Zero and controllable linewidth enhancement factor in p-doped 1.3 μm quantum dot lasers. JAPANESE JOURNAL OF APPLIED PHYSICS , 46 (4B) 2421 - ?. 10.1143/JJAP.46.2421.

Badcock, TJ; Mowbray, DJ; Nabavi, E; Liu, HY; Steer, MJ; Hopkinson, M; ... Moshchalkov, VV; + view all (2007) Electronic Structure of Long Wavelength (>1.3µm) GaAsSb-capped InAs Quantum Dots. In: Jantsch, W and Schaffler, F, (eds.) Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 24-28 July 2006. (pp. 951 - 952). American Institute of Physics: Melville, US.

Badcock, TJ; Royce, RJ; Mowbray, DJ; Skolnick, MS; Liu, HY; Hopkinson, M; ... Jiang, Q; + view all (2007) Low threshold current density and negative characteristic temperature 1.3 μm InAs self-assembled quantum dot lasers. Applied Physics Letters , 90 (11) 111102 - ?. 10.1063/1.2713136.

Chalcraft, ARA; Lam, S; O'Brien, D; Krauss, TF; Sahin M, S; D, S; ... M,; + view all (2007) Mode structure of the L3 photonic crystal cavity. Applied Physics Letters , 90 (24) 241117 - ?. 10.1063/1.2748310.

Choi, TL; Ray, SK; Zhang, Z; Childs, D; Groom, KM; Stevens, BJ; ... Hogg, RA; + view all (2007) Quantum dot superluminescent diodes - bandwidth engineering and epitaxy for high powers. In: 2007 International Conference on Indium Phosphide and Related Materials: Conference Proceedings: 19th IPRM: 14-18 May 2007, Matsue, Japan. (pp. 289 - 292). IEEE: Piscataway, US.

Herrera, M; Gonzalez, D; Hopkinson, M; Liu, HY; Garcia, R; (2007) Kinetic considerations on the phase separation of GaInNAs quantum wells. Physica Status Solidi (C) , 4 (4) 1477 - ?.

Jin, CY; Liu, HY; Groom, KM; Jiang, Q; Hopkinson, M; Badcock, TJ; ... Mowbray, DJ; + view all (2007) Effects of photon and thermal coupling mechanisms on the characteristics of self-assembled InAs/GaAs quantum dot lasers. Physical Review B , 76 (8) 085315 - ?. 10.1103/PhysRevB.76.085315.

Jin, CY; Liu, HY; Zhang, SY; Jiang, Q; Liew, SL; Hopkinson, M; ... Mowbray, DJ; + view all (2007) Optical transitions in type-II InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. Applied Physics Letters , 91 (2) 021102 - ?. 10.1063/1.2752778.

Kolodka, RS; Ramsay, AJ; Fox, AM; Skolnick, MS; Fry, PW; Ng, WK; ... Hopkinson, M; + view all (2007) Coherent control of single quantum dot exciton embedded in a photodiode. Journal of Modern Optics , 54 (12) 1717 - 1722. 10.1080/09500340701345650.

Kolodka, RS; Ramsay, AJ; Skiba-Szymanska, J; Fox, AM; Skolnick, MS; Fry, PW; Liu, HY; (2007) Inversion recovery of single quantum-dot exciton based qubit. Physical Review B - Condensed Matter and Materials Physics , 75 (19) 10.1103/PhysRevB.75.193306.

Liu, HY; Badcock, TJ; Jin, CY; Nabavi, E; Groom, KM; Hopkinson, M; Mowbray, DJ; (2007) Reduced temperature sensitivity of the lasing wavelength in near-1.3-µm InAs/GaAs quantum-dot laser with a stepped composition strain-reducing layer. Electronics Letters , 43 (12) 670 - 672. 10.1049/el:20070716.

Marko, IP; Adams, AR; Sweeney, SJ; Masse, NF; Krebs, R; Reithmaier, JP; ... Sugawara, M; + view all (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure. Physica Status Solidi (B) , 244 (1) 82 - ?. 10.1002/pssb.200672544.

Ramsay, AJ; Kolodka, RS; Bello, F; Whittaker, DM; Fox, AM; Skolnick, MS; ... Hopkinson, M; + view all (2007) Coherent response of a quantum dot exciton driven by a rectangular spectrum optical pulse. Physical Review B - Condensed Matter and Materials Physics , 75 (11) 10.1103/PhysRevB.75.113302.

Ray, SK; Choi, TL; Groom, KA; Liu, HY; Hopkinson, M; Hogg, RA; (2007) High-power 1.3-μm quantum-dot superluminescent light-emitting diode grown by molecular beam epitaxy. IEEE PHOTONICS TECHNOLOGY LETTERS , 19 (2-4) 109 - ?. 10.1109/LPT.2006.889099.

Ray, SK; Choi, TL; Groom, KM; Stevens, BJ; Liu, HY; Hopkinson, M; Hogg, RA; (2007) High-power and broadband quantum dot superluminescent diodes centered at 1250 nm for optical coherence tomography. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , 13 (5) 1267 - ?. 10.1109/JSTQE.2007.902997.

Ray, SK; Liu, HY; Choi, TL; Groom, KM; Liew, SL; Hopkinson, M; Hogg, RA; (2007) Molecular beam epitaxial growth of high power quantum dot super-luminecent diodes. JAPANESE JOURNAL OF APPLIED PHYSICS , 46 (4B) 2418 - ?. 10.1143/JJAP.46.2418.

Sandall, IC; Smowton, PM; Liu H Y, HM; (2007) Nonradiative recombination in. multiple layer In(Ga)As quantum-dot lasers. IEEE Journal of Quantum Electronics , 43 (7-8) 698 - 703. 10.1109/JQE.2007.901583.

Smowton, PM; Sandall, IC; Liu, HY; Hopkinson, M; (2007) Gain in p-doped quantum dot lasers. Journal of Applied Physics , 101 (1) 013107 - ?. 10.1063/1.2405738.

Smowton, PM; Sandall, IC; Mowbray, DJ; Liu, HY; Hopkinson, M; (2007) Maximising the gain: optimising the carrier distribution in InGaAs quantum dot lasers. In: Osinski, M and Henneberger, F and Arakawa, Y, (eds.) Proceedings of SPIE. (pp. 646817 - 646817). SPIE - The International Society for Optical Engineering: Bellingham, US.

Smowton, PM; Sandall, IC; Mowbray, DJ; Liu, HY; Hopkinson, M; (2007) Temperature-dependent gain and threshold in P-doped quantum dot lasers. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , 13 1261 - ?. 10.1109/JSTQE.2007.903375.

Tartakovskii, AI; Wright, T; Russell, A; Fal'ko, VI; Van'kov, AB; Skiba-Szymanska, J; ... Hopkinson, M; + view all (2007) Nuclear spin switch in semiconductor quantum dots. Physical Review Letters , 98 (2) , Article 026806 . 10.1103/PhysRevLett.98.026806. Green and gold open access
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Ulloa, JM; Drouzas, IWD; Koenraad, PM; Mowbray, DJ; Steer, MJ; Liu, HY; Hopkinson, M; (2007) Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer. Applied Physics Letters , 90 (21) 213105 - ?. 10.1063/1.2741608.

Zhang, ZY; Luxmoore, IJ; Jiang, Q; Liu, HY; Groom, KM; Childs, DT; ... Hogg, RA; + view all (2007) Broadband quantum dot superluminescent LED with angled facet formed by focused ion beam etching. Electronics Letters , 43 (10) 587 - ?. 10.1049/el:20070828.

Zhang, ZY; Luxmoore, IJ; Jin, CY; Liu, HY; Jiang, Q; Groom, KM; ... Hogg, RA; + view all (2007) Effect of facet angle on effective facet reflectivity and operating characteristics of quantum dot edge emitting lasers and superluminescent light-emitting diodes. Applied Physics Letters , 91 (8) 081112 - ?. 10.1063/1.2772845.

2006

Badcock, TJ; Liu, HY; Groom, KM; Jin, CY; Gutierrez, M; Hopkinson, M; ... Skolnick, MS; + view all (2006) 1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature. Electronics Letters , 42 (16) 922 - ?. 10.1049/el:20061487.

Hopkinson, M; Jin, CY; Liu, HY; Airey, R; (2006) 1.34 μm GaInNAs quantum well lasers with low room-temperature threshold current density. Electronics Letters , 42 (16) 923 - ?. 10.1049/el:20061487.

Jin, CY; Badcock, TJ; Liu, HY; Groom, KM; Royce, RJ; Mowbray, DJ; Hopkinson, M; (2006) Observation and modeling of a room-temperature negative characteristic temperature 1.3µm p-type modulation doped quantum dot laser. IEEE Journal of Quantum Electronics , 42 (12) 1259 - 1265. 10.1109/JQE.2006.883473.

Jin, CY; Liu, HY; Badcock, TJ; Groom, KM; Gutierrez, M; Royce, R; ... Mowbray, DJ; + view all (2006) High-performance 1.3 μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature. IEE Proceedings - Optoelectronics , 153 (6) 280 - ?. 10.1049/ip-opt:20060048.

Liu, H; Steer, MJ; Badcock, TJ; Mowbray, DJ; Skolnick, MS; Suarez, F; ... David, JPR; + view all (2006) Room-temperature 1.6-μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer. Journal of Applied Physics , 99 046104 - 046106. 10.1063/1.2173188.

Liu, HY; Badcock, TJ; Groom, KM; Hopkinson, M; Gutierrez, M; Childs, DT; ... D, J; + view all (2006) High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature. In: Lenstra, D and Pessa, M and White, IH, (eds.) PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE). (pp. 18417 - ?). SPIE-INT SOCIETY OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Liu, HY; Liew, SL; Badcock, T; Mowbray, DJ; Skolnick, MS; Ray, SK; ... Hogg, RA; + view all (2006) p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Applied Physics Letters , 89 (7) 073113 - ?. 10.1063/1.2336998.

Liu, HY; Tey, CM; Jin, CY; Liew, SL; Navaretti, P; Hopkinson, M; Cullis, AG; (2006) Effects of growth temperature on the structural and optical properties of 1.6 μm GaInNAs/GaAs multiple quantum wells. Applied Physics Letters , 88 (19) 191907 - ?. 10.1063/1.2202744.

Navaretti, P; Jin, C; Liu, HY; Airey, R; Hopkinson, M; (2006) Dilute nitride-based 1.3-μm high-performance lasers. In: Lenstra, D and Pessa, M and White, IH, (eds.) Proceedings of SPIE. (pp. 61840D - ?). SPIE - The International Society for Optical Engineering: Bellingham, US.

Ng, JS; Liu, HY; Steer, MJ; Hopkinson, M; David, JPR; (2006) Photoluminescence beyond 1.5 μm from InAs quantum dots. MICROELECTRONICS JOURNAL , 37 (12) 1468 - ?. 10.1016/j.mejo.2006.05.007.

Ray, SK; Groom, KM; Alexander, R; Kennedy, K; Liu, HY; Hopkinson, M; Hogg, RA; (2006) Design, growth, fabrication, and characterization of InAs/GaAs 1.3 µm quantum dot broadband superluminescent light emitting diode. Journal of Applied Physics , 100 103105 - 103110. 10.1063/1.2365387.

Ray, SK; Groom, KM; Beattie, MD; Liu, HY; Hopkinson, M; Hogg, RA; (2006) Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells. In: Eyink, KG and Huffaker, DL, (eds.) Proceedings of SPIE. (pp. 612907-1 - 612907-6). SPIE - The International Society for Optical Engineering: Bellingham, US.

Ray, SK; Groom, KM; Beattie, MD; Liu, HY; Hopkinson, M; Hogg, RA; (2006) Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells. IEEE PHOTONICS TECHNOLOGY LETTERS , 18 (1-4) 58 - ?. 10.1109/LPT.2005.860028.

Ray, SK; Groom, KM; Liu, HY; Hopkinson, M; Hogg, RA; (2006) Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells. JAPANESE JOURNAL OF APPLIED PHYSICS , 45 (4A) 2542 - ?. 10.1143/JJAP.45.2542.

Resneau, P; Calligaro, M; Krakowski, M; Liu, HY; Hopkinson, M; Somers, A; ... Reithmaier, JP; + view all (2006) High power and very low noise operation at 1.3 and 1.5 μm with quantum dot and quantum dash Fabry-Perot lasers for microwave links. In: Sjoqvist, LJ and Wilson, RA and Merlet, TJ, (eds.) Proceedings of SPIE. SPIE - The International Society for Optical Engineering: Bellingham, US.

Sandall, IC; Smowton, PM; Thomson, JD; Badcock, T; Mowbray, DJ; Liu, HY; Hopkinson, M; (2006) Temperature dependence of threshold current in p-doped quantum dot lasers. Applied Physics Letters , 89 (15) 151181 - ?. 10.1063/1.2361167.

Sandall, IC; Smowton, PM; Walker, CL; Badcock, T; Mowbray, DJ; Liu, HY; Hopkinson, M; (2006) The effect of p doping in InAs quantum dot lasers. Applied Physics Letters , 88 (11) 111113 - ?. 10.1063/1.2186078.

Sandall, IC; Smowton, PM; Walker, CL; Liu, HY; Hopkinson, M; Mowbray, DJ; (2006) Recombination mechanisms in 1.3-μm InAs quantum-dot lasers. IEEE PHOTONICS TECHNOLOGY LETTERS , 18 (5-8) 965 - ?. 10.1109/LPT.2006.873560.

Sandall, IC; Walker, CL; Smowton, PM; Mowbray, DJ; Liu, HY; Hopkinson, M; (2006) Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures. IEE Proceedings - Optoelectronics , 153 (6) 316 - ?. 10.1049/ip-opt:20060042.

Sellers, IR; Mowbray, DJ; Badcock, TJ; Wells, JPR; Phillips, PJ; Carder, DA; ... Hopkinson, M; + view all (2006) Infrared modulated interlevel spectroscopy of 1.3 μm self-assembled quantum dot lasers using a free electron laser. Applied Physics Letters , 88 (8) 081108 - ?. 10.1063/1.2177656.

Smowton, PM; Sandall, IC; Mowbray, DJ; Liu, HY; Hopkinson, M; (2006) 1.3 μm emitting, self assembled quantum dot lasers. In: 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2006: LEOS 2006. (pp. 867 - ?). IEEE Computer Society: Piscataway, US.

Smowton, PM; Sandall, IC; Walker, CL; Thomson, JD; Sobiesierski, A; Badcock, T; ... Hopkinson, M; + view all (2006) Characterisation of modulation doped quantum dot lasers. In: Mermeistein, C and Bour, DP, (eds.) Proceedings of SPIE. (pp. T1330 - ?). SPIE - The International Society for Optical Engineering: Bellingham, US.

Tartakovskii, AI; Kolodka, RS; Liu, HY; Migliorato, MA; Hopkinson, M; Makhonin, MN; ... Skolnick, MS; + view all (2006) Exciton fine structure splitting in dot-in-a-well structures. Applied Physics Letters , 88 (13) 131115 - ?. 10.1063/1.2191476.

Walker, CL; Sandall, IC; Smowton, PM; Mowbray, DJ; Liu, HY; Liew, SL; Hopkinson, M; (2006) Improved performance of 1.3-μm In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers. IEEE PHOTONICS TECHNOLOGY LETTERS , 18 (13-16) 1557 - ?. 10.1109/LPT.2006.879592.

2005

Gutierrez, M; Herrera, M; Gonzalez, D; Garcia, R; Hopkinson, M; Liu, HY; (2005) Influence of structure and defects on the performance of dot-in-well laser structures. In: Badenes, G and Abbott, D and Serpenguzel, A, (eds.) Proceedings of SPIE. (pp. 486 - 497). SPIE - The International Society for Optical Engineering: Bellingham, US.

Gutierrez, M; Hopkinson, M; Liu, HY; Herrera, M; Gonzalez, D; Garcia, R; (2005) Characterization of structure and defects in dot-in-well laser structures. Materials Science and Engineering: C , 25 (5-8) 793 - ?. 10.1016/j.msec.2005.06.053.

Gutierrez, M; Hopkinson, M; Liu, HY; Herrera, M; Gonzalez, D; Garcia, R; (2005) Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GraAs DWELL quantum. JOURNAL OF CRYSTAL GROWTH , 278 (1-4) 151 - ?. 10.1016/j.jcrysgro.2004.12.179.

Gutierrez, M; Hopkinson, M; Liu, HY; Ng, JS; Herrera, M; Gonzalez, D; ... Beanland, R; + view all (2005) Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures. Physica E: Low-dimensional Systems and Nanostructures , 26 (1-4) 245 - ?. 10.1016/j.physe.2004.08.098.

Gutierrez, M; Hopkinson, M; Liu, HY; Tartakovskii, AI; Herrera, M; Gonzalez, D; Garcia, R; (2005) Critical barrier thickness for the formation of InGaAs/GaAs quantum dots. Materials Science and Engineering: C , 25 (5-8) 798 - ?. 10.1016/j.msec.2005.06.052.

Herrera, M; Gonzalez, D; Garcia, R; Hopkinson, M; Navaretti, P; Gutierrez, M; Liu, HY; (2005) Structural and optical properties of high In and N content GaInNAs quantum wells. THIN SOLID FILMS , 483 (1-2) 185 - ?. 10.1016/j.tsf.2005.01.016.

Herrera, M; Gonzalez, D; Hopkinson, M; Gutierrez, M; Navaretti, P; Liu, HY; Garcia, R; (2005) Composition modulation in GaInNAs quantum wells: Comparison of experiment and theory. Journal of Applied Physics , 97 (7) 073705 - ?. 10.1063/1.1866491.

Herrera, M; Gonzalez, D; Hopkinson, M; Gutierrez, M; Navaretti, P; Liu, HY; Garcia, R; (2005) Spinodal decomposition in GaInNAs/GaAs multi-quantum wells. Physica Status Solidi (C) , 2 (4) 1292 - ?.

Herrera, M; Gonzalez, D; Lozano, JG; Garcia, R; Hopkinson, M; Liu, HY; ... Navaretti, P; + view all (2005) Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy. Journal of Applied Physics , 98 (2) 023521 - ?. 10.1063/1.1988976.

Herrera, M; Gonzalez, D; Lozano, JG; Gutierrez, M; Garcia, R; Hopkinson, M; Liu, HY; (2005) An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 20 (10) 1096 - ?. 10.1088/0268-1242/20/10/019.

Herrera, M; Gonzalez, D; Lozano, JG; Hopkinson, M; Gutierrez, M; Navaretti, P; ... Garcia, R; + view all (2005) Activation energy for surface diffusion in GaInNAs quantum wells. In: Cullis, AG and Hutchison, JL, (eds.) Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK. (pp. 279 - 282). Springer Verlag: Berlin / Heidelberg, Germany.

Herrera, M; Gonzalez, D; Lozano, JG; Hopkinson, M; Gutierrez, M; Navaretti, P; ... Garcia, R; + view all (2005) Defect generation in high In and N content GaInNAs quantum wells: unfaulting of Frank dislocation loops. In: Cullis, AG and Hutchison, JL, (eds.) Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK. (pp. 139 - 142). Springer-Verlag: Berlin / Heidelberg, Germany.

Liu, HY; Badcock, TJ; Sellers, IR; Soong, WM; Groom, KM; Hopkinson, M; ... Skolnick, MS; + view all (2005) Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step. Physica E: Low-dimensional Systems and Nanostructures , 26 (1-4) 129 - ?. 10.1016/j.physe.2004.08.038.

Liu, HY; Childs, DT; Badcock, TJ; Groom, KM; Sellers, IR; Hopkinson, M; ... Skolnick, MS; + view all (2005) High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents. IEEE PHOTONICS TECHNOLOGY LETTERS , 17 (6) 1139 - ?. 10.1109/LPT.2005.846948.

Liu, HY; Sellers, IR; Gutierrez, M; Groom, KM; Beanland, R; Soong, WM; ... M, S; + view all (2005) Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser. Materials Science and Engineering: C , 25 (5-8) 779 - ?. 10.1016/j.msec.2005.06.006.

Liu, HY; Soong, WM; Navaretti, P; Hopkinson, M; David, JPR; (2005) Enhanced optical and structural properties of 1.3 μm GaInNAs/GaAs multiple quantum-well heterostructures with stepped strain-mediating layers. Applied Physics Letters , 86 (6) 062107 - ?. 10.1063/1.1862784.

Liu, HY; Steer, MJ; Badcock, TJ; Mowbray, DJ; Skolnick, MS; Navaretti, P; ... Hogg, RA; + view all (2005) Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. Applied Physics Letters , 86 (14) 143108 - ?. 10.1063/1.1897850.

Liu, HY; Tey, CM; Sellers, IR; Badcock, TJ; Beanland, R; Mowbray, DJ; ... Cullis, AG; + view all (2005) Mechanism for the improvements of optical properties of 1.3µm InAs/GaAs quantum dots by a combined InAIAs/InGaAs cap layer. Journal of Applied Physics , 98 083516 - 083522. 10.1063/1.2113408.

Marko, IP; Adams, AR; Sweeney, SJ; Mowbray, DJ; Skolnick, MS; Liu, HY; Groom, KM; (2005) Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-μm quantum-dot lasers. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS , 11 (5) 1041 - ?. 10.1109/JSTQE.2005.853847.

Marko, IP; Masse, N; Sweeney, SJ; Adams, AR; Sellers, IR; Mowbray, DJ; ... Groom, KM; + view all (2005) Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 μm quantum dot lasers. In: LEOS 2005: The 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2005. (pp. 402 - 403). IEEE: Piscataway, US.

Migliorato, MA; Steer, MJ; Soong, WM; Tey, CM; Liu, HY; Liew, SL; ... Hopkinson, M; + view all (2005) Influence of In composition on the photoluminescence emission of In(Ga)As quantum dot bilayers. Physica E: Low-dimensional Systems and Nanostructures , 26 (1-4) 124 - ?. 10.1016/j.physe.2004.08.037.

Ray, SK; Groom, KM; Hogg, RA; Liu, HY; Hopkinson, M; Badcock, T; ... Skolnick, MS; + view all (2005) Improved temperature performance of 1.31-μm quantum dot lasers by optimized ridge waveguide design. IEEE PHOTONICS TECHNOLOGY LETTERS , 17 (9) 1785 - ?. 10.1109/LPT.2005.853530.

Ray, SK; Groom, KM; Hogg, RA; Liu, HY; Sellers, IR; Hopkinson, M; ... Skolnick, MS; + view all (2005) Growth, fabrication, and operating characteristics of ultra-low threshold current density 1.3 μm quantum dot lasers. JAPANESE JOURNAL OF APPLIED PHYSICS , 44 (4B) 2520 - ?. 10.1143/JJAP.44.2520.

Sellers, IR; Liu, HY; Badcock, TJ; Groom, KM; Mowbray, DJ; Gutierrez, M; ... Skolnick, MS; + view all (2005) Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers. Physica E: Low-dimensional Systems and Nanostructures , 26 (1-4) 382 - ?. 10.1016/j.physe.2004.08.007.

Sellers, IR; Liu, HY; Mowbray, DJ; Badcock, TJ; Groom, KM; Hopkinson, M; ... Robbins, DJ; + view all (2005) Growth and characterization of 1.3 μm multi-layer quantum dots lasers incorporating high growth temperature spacer layers. In: Menendez, J and VanDeWalle, CG, (eds.) Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors: ICPS-27: Flagstaff, Arizona, 26-30 July, 2004. (pp. 1547 - 1548). American Institute of Physics: Melville, US.

Smowton, PM; Walker, CL; Sandall, IC; Sellers, IR; Mowbray, DJ; Liu, HY; ... Hopkinson, M; + view all (2005) Growth and characterisation of multiple layer quantum dot lasers. In: Mermelstein, C and Bour, DP, (eds.) Proceedings of SPIE. (pp. 332 - 346). SPIE - The International Society for Optical Engineering: Bellingham, US.

Tey, CM; Cullis, AG; Liu, HY; Ross, IM; Hopkinson, M; (2005) Structural analysis of the effects of a combined InAlAs-InGaAs capping layer in 1.3-μm InAs quantum dots. In: Cullis, AG and Hutchison, JL, (eds.) Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK. (pp. 263 - 266). Springer-Verlag: Berlin / Heidelberg, Germany.

Tey, CM; Liu, HY; Cullis, AG; Ross, IM; Hopkinson, M; (2005) Structural studies of a combined InAl-InGaAs capping layer on 1.3-μm Inas/GaAs quantum dots. JOURNAL OF CRYSTAL GROWTH , 285 (1-2) 17 - ?. 10.1016/j.jcrysgro.2005.06.059.

Walker, CL; Sandall, IC; Smowton, PM; Sellers, I; Mowbray, DJ; Liu, HY; Hopkinson, M; (2005) The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers. IEEE PHOTONICS TECHNOLOGY LETTERS , 17 (10) 2011 - ?. 10.1109/LPT.2005.854393.

2004

Herrera, M; Gonzalez, D; Garcia, R; Hopkinson, M; Navaretti, P; Gutierrez, M; Liu, HY; (2004) Composition fluctuations in GaInNAs multi-quantum wells. IEE Proceedings - Optoelectronics , 151 (5) 271 - ?. 10.1049/ip-opt:20040930.

Herrera, M; Gonzalez, D; Garcia, R; Hopkinson, M; Navaretti, P; Gutierrez, M; Liu, HY; (2004) Structural defects characterisation of GaInNAs MQWs by TEM and PL. IEE Proceedings - Optoelectronics , 151 (5) 385 - ?. 10.1049/ip-opt:20040870.

Herrera, M; Gonzalez, D; Hopkinson, M; Navaretti, P; Gutierrez, M; Liu, HY; Garcia, R; (2004) Influence of growth temperature on the structural and optical quality of GaInNAs/GaAs multi-quantum wells. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 19 (7) 813 - ?.

Herrera, M; Gonzalez, D; Liu, HY; Gutierrez, M; Hopkinson, M; Garcia, R; (2004) Composition modulation and growth-associated defects in GaInNAs/GaAs multi quantum wells. In: McVitie, S and McComb, D, (eds.) Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. (pp. 103 - 106). Institute of Physics Publishing: Bristol, UK.

Liu, H; Sellers, IR; Gutiérrez, M; Groom, KM; Soong, WM; Hopkinson, M; ... Skolnick, MS; + view all (2004) Influences of the spacer layer growth temperature on multi-layer InAs/GaAs quantum dot structures. Journal of Applied Physics , 96 1988 - 1992. 10.1063/1.1773378.

Liu, HY; Sellers, IR; Badcock, TJ; Mowbray, DJ; Skolnick, MS; Groom, KM; ... Beanland, R; + view all (2004) Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer. Applied Physics Letters , 85 (5) 704 - ?. 10.1063/1.1776631.

Liu, HY; Sun, HD; Navaretti, P; Ng, JS; Hopkinson, M; Clark, AH; Dawson, MD; (2004) 1.55-μm GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer. In: Wang, Z and Chen, Y and Ye, X, (eds.) 2004 13th International Conference on Semiconducting & Insulating Materials: SIMC-XIII-2004: September 20-25, 2004, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China. (pp. 189 - 193). IEEE Computer Society: Piscataway, US.

Marko, IP; Adams, AR; Sweeney, SJ; Sellers, IR; Mowbray, DJ; Skolnick, MS; ... Groom, KM; + view all (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers. In: 2004 IEEE 19TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST. (pp. 57 - ?). IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA

Miguel-Sanchez, J; Hopkinson, M; Gutierrez, M; Navaretti, P; Liu, HY; Guzman, A; ... Munoz, E; + view all (2004) Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH , 270 (1-2) 62 - ?. 10.1016/j.jcrysgro.2004.06.022.

Navaretti, P; Liu, H; Hopkinson, M; Gutierrez, M; David, JPR; Hill, G; ... Garcia, R; + view all (2004) Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction. IEE Proceedings - Optoelectronics , 151 (5) 301 - ?. 10.1049/ip-opt:20040934.

Sellers, IR; Liu, HY; Groom, KM; Childs, DT; Robbins, D; Badcock, TJ; ... Skolnick, MS; + view all (2004) 1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density. Electronics Letters , 40 (22) 1412 - ?. 10.1049/el:20046692.

Sun, HD; Clark, AH; Calvez, S; Dawson, MD; Liu, HY; Hopkinson, M; ... Million, A; + view all (2004) Investigations of 1.55-μm GaInNAs/GaAs heterostructures by optical spectroscopy. IEE Proceedings - Optoelectronics , 151 (5) 331 - ?. 10.1049/ip-opt:20040866.

Sun, HD; Clark, AH; Liu, HY; Hopkinson, M; Calvez, S; Dawson, MD; ... Rorison, JM; + view all (2004) Optical characteristics of 1.55 μm GaInNAs multiple quantum wells. Applied Physics Letters , 85 (18) 4013 - ?. 10.1063/1.1812371.

Tartakovskii, AI; Makhonin, MN; Sellers, IR; Cahill, J; Andreev, AD; Whittaker, DM; ... M,; + view all (2004) Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons. Physical Review B , 70 (19) 193303 - ?. 10.1103/PhysRevB.70.193303.

Xu, B; Wang, ZG; Chen, YH; Jin, P; Ye, XL; Liu, HY; ... Liu, FQ; + view all (2004) Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices. In: Wang, Z and Chen, Y and Ye, X, (eds.) 2004 13th International Conference on Semiconducting & Insulating Materials: SIMC-XIII-2004: September 20-25, 2004, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China. (pp. 113 - 118). IEEE: Piscataway, US.

Zibik, EA; Wilson, LR; Green, RP; Wells, JPR; Phillips, PJ; Carder, DA; ... Hopkinson, M; + view all (2004) Polaron relaxation channel in InAs/GaAs self-assembled quantum dots. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 19 (4) 316 - ?. 10.1088/0268-1242/19/4/105.

Zibik, EA; Wilson, LR; Green, RP; Wells, JPR; Phillips, PJ; Carder, DA; ... Hopkinson, M; + view all (2004) Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots. Physica E: Low-dimensional Systems and Nanostructures , 21 (2-4) 405 - ?. 10.1016/j.physe.2003.11.065.

2003

Liu, H; Hopkinson, M; Harrison, CN; Steer, MJ; Firth, R; Sellers, IR; ... Skolnick, MS; + view all (2003) Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure. Journal of Applied Physics , 93 2931 - 2936. 10.1063/1.1542914.

Liu, HY; Hopkinson, M; (2003) Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer. Applied Physics Letters , 82 (21) 3644 - ?. 10.1063/1.1577827.

Liu, HY; Hopkinson, M; Navaretti, P; Gutierrez, M; Ng, JS; David, JPR; (2003) Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer. Applied Physics Letters , 83 (24) 4951 - ?. 10.1063/1.1632027.

Liu, HY; Sellers, IR; Hopkinson, M; Harrison, CN; Mowbray, DJ; Skolnick, MS; (2003) Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity. Applied Physics Letters , 83 (18) 8716 - ?. 10.1063/1.1622443.

Migliorato, MA; Navaretti, P; Norris, DJ; Liew, SL; Cullis, AG; Liu, HY; ... Hopkinson, M; + view all (2003) Optimisation of the optical emission of bilayers of quantum dots. MICROSCOPY OF SEMICONDUCTING MATERIALS (180) 103 - ?.

Sellers, IR; Liu, HY; Hopkinson, M; Mowbray, DJ; Skolnick, MS; (2003) 1.3 μm lasers with AlInAs-capped self-assembled quantum dots. Applied Physics Letters , 83 (23) 4710 - ?. 10.1063/1.1632533.

2002

Jia, R; Jiang, DS; Liu, HY; Wei, YQ; Xu, B; Wang, ZG; (2002) Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots. JOURNAL OF CRYSTAL GROWTH , 234 (2-3) 354 - ?.

Liu, HY; Sellers, IR; Airey, RJ; Steer, MJ; Houston, PA; Mowbray, DJ; ... Wang, ZG; + view all (2002) Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate. Applied Physics Letters , 80 (20) 3769 - ?. 10.1063/1.1481245.

2001

Liu, HY; Xu, B; Ding, D; Chen, YH; Zhang, JF; Wu, J; Wang, ZG; (2001) Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer. JOURNAL OF CRYSTAL GROWTH , 227 1005 - ?.

Liu, HY; Xu, B; Qian, JJ; Ye, XL; Han, Q; Ding, D; ... Wang, ZG; + view all (2001) Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots. Journal of Applied Physics , 90 (4) 2048 - ?.

Liu, HY; Xu, B; Wei, YQ; Ding, D; Qian, JJ; Han, Q; ... Wang, ZG; + view all (2001) High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm. Applied Physics Letters , 79 (18) 2868 - ?.

Wei, YQ; Liu, HY; Chai, CL; Xu, B; Ding, D; Wang, ZG; (2001) Unusual temperature-dependent optical properties of self-organized InAs/GaAs quantum dots at high excitation power. CHINESE PHYSICS LETTERS , 18 (7) 982 - ?.

2000

Li, YF; Liu, FQ; Xu, B; Ye, XL; Ding, D; Sun, ZZ; ... Wang, ZG; + view all (2000) Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate. JOURNAL OF CRYSTAL GROWTH , 219 (1-2) 17 - ?.

Li, YF; Ye, XL; Liu, FQ; Xu, B; Ding, D; Jiang, WH; ... Wang, ZG; + view all (2000) Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates. APPLIED SURFACE SCIENCE , 167 (3-4) 191 - ?.

Li, YF; Ye, XL; Xu, B; Liu, FQ; Ding, D; Jiang, WH; ... Wang, ZG; + view all (2000) Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH , 218 (5-4) 451 - ?.

Liu, BL; Xu, ZY; Liu, HY; Wang, ZG; (2000) Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots. JOURNAL OF CRYSTAL GROWTH , 220 (1-2) 51 - ?.

Liu, HY; Wang, XD; Wei, YQ; Xu, B; Ding, D; Wang, ZG; (2000) Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer. JOURNAL OF CRYSTAL GROWTH , 220 (3) 216 - ?.

Liu, HY; Wang, XD; Wu, J; Xu, B; Wei, YQ; Jiang, WH; ... Wang, ZG; + view all (2000) Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3). Journal of Applied Physics , 88 (6) 3392 - ?.

Liu, HY; Wang, XD; Xu, B; Ding, D; Jiang, WH; Wu, J; Wang, ZG; (2000) Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots. JOURNAL OF CRYSTAL GROWTH , 213 (1-2) 193 - ?.

Liu, HY; Xu, B; Chen, YH; Ding, D; Wang, ZG; (2000) Effects of seed layer on the realization of larger self-assembled coherent InAs/GaAs quantum dots. Journal of Applied Physics , 88 (9) 5433 - ?.

Liu, HY; Xu, B; Gong, Q; Ding, D; Liu, FQ; Chen, YH; ... Wang, ZG; + view all (2000) Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers. JOURNAL OF CRYSTAL GROWTH , 210 (4) 451 - ?.

Liu, HY; Zhou, W; Ding, D; Jiang, WH; Xu, B; Liang, JB; Wang, ZG; (2000) Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A. Applied Physics Letters , 76 (25) 3741 - ?.

Wang, XD; Liu, HY; Niu, ZC; Feng, SL; (2000) Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0 <= x <= 0.3) capping layer UCL SFX Services. Acta Physica Sinica , 49 (11) 2230 - ?.

1999

Jiang, WH; Xu, HZ; Xu, B; Wu, J; Ye, XL; Liu, HY; ... Wang, ZG; + view all (1999) Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy. JOURNAL OF CRYSTAL GROWTH , 205 (4) 607 - ?.

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Chen, S; Tang, M; Wu, J; Jiang, Q; Dorogan, V; Benamara, M; ... Liu, H; + view all 1.3-μm InAs/GaAs quantum-dot laser monolithically grown on Si Substrates operating over 100°C. Electronics Letters (In press). Green open access
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Jiang, Q; Lee, A; Tang, M; Seeds, A; Liu, H; Long-wavelength III-V quantum-dot lasers monolithically grown on Si substrates (Invited). In: (Proceedings) 2013 IEEE 5TH INTERNATIONAL NANOELECTRONICS CONFERENCE.

Liu, H; Jiang, Q; Lee, A; Tang, M; Seeds, A; Silicon-based long-wavelength III-V quantum-dot lasers (Invited). In: (Proceedings) 24th International confernce on Indium Phosphide and Related Materials.

Liu, H; Lee, A; Jiang, Q; Seeds, A; InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrate (Invited). In: (Proceedings) IEEE Photonics Confernce.

Liu, H; Wang, T; Lee, A; Tutu, F; Pozzi, F; Seeds, A; 1300-nm InAs/GaAs quantum-dot lasers monolithically grown on Ge and Si substrate. In: (Proceedings) Photonics West 2012.

Liu, H; Wang, T; Lee, A; Tutu, F; Pozzi, F; Seeds, A; 1300-nm InAs/GaAs quantum-dot lasers monolithically grown on Ge and Si substrates for Si photonics (Invited Paper),. In: (Proceedings) Photonics West 2012.

Liu, H; Wang, T; Lee, A; Tutu, F; Pozzi, F; Seeds, A; Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge and Si substrates for Si photonics (Invited). In: (Proceedings) UK Semiconductors 2011.

Nuytten, T; Hayne, M; Bansal, B; LIU, H; Hopkinson, M; Moshchalkov, V; Charge separation and temperature-induced carrier migration in Ga1−xInxNyAs1−y multiple quantum wells. PHYSICAL REVIEW B , 84 , Article 045302. 10.1103/PhysRevB.84.045302. Green open access
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Nuytten, T; Hayne, M; Bansal, B; LIU, H; Hopkinson, M; Moshchalkov, V; Charge separation and temperature-induced carrier migration in Ga1−xInxNyAs1−y multiple quantum wells. PHYSICAL REVIEW B , 84 , Article 045302. 10.1103/PhysRevB.84.045302.

Wang, T; Lee, A; Tutu, F; Pozzi, F; Seeds, A; Liu, H; Long-wavelength InAs/GaAs quantum-dot laser diodes monolithically grown on Ge and Si substrate for Si photonics. In: (Proceedings) UK Semiconductor 2011.

This list was generated on Sat Oct 25 03:09:35 2014 BST.