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Professor Richard Jackman

PhD, CEng, MIEE, CPhys, FInstP, CChem, MRSC

Picture of Prof Richard Jackman

Chair in Electronic Devices

Room 911

Department of Electronic & Electrical Engineering

University College London

Torrington Place

London

WC1E 7JE

Research Group:Eletronic Materials & Devices
E-mail:r.jackman@ee.ucl.ac.uk
Telephone:+44 (0)20 7679 1381 (31381 Internal)
Fax:+44 (0)20 7388 9325

Professor Jackman gained a BSc in Chemistry at the University of Southampton, before completing a PhD in Surface Science at the same institution in 1986. Richard was made the Royal Society Eliz. Challenor Research Fellow to study ‘processes at the semiconductor-vapour interface’ at the University of Oxford, from 1986 to 1989, during which period he also held a Junior Research Fellowship at Linacre College, Oxford. Following his appointment as a Lecturer within the Electronic and Electrical Engineering department at UCL in 1989, Richard established a research group exploring the use of diamond for electronic device fabrication, a topic new to UCL and one only just emerging worldwide. Richard became a Senior Lecturer in 1993, a Reader in Electronics in 1996 and took up a Personal Chair in Electronic Devices in 2008. Professor Jackman is a Fellow of the Institute of Physics, and a Chartered Engineer and Physicist. Richard chaired the British Vacuum Council (BVC, 2000-3), represented the UK on the Electronic Materials division of the international Union of Vacuum Science and Technology Associations (IUVSTA, 1995-2001), and represented the UK on the Council of IUVSTA (2001-4). Professor Jackman currently serves on the committee of the IOP’s Semiconductor Physics group (2007-).

Richard has served on the Editorial Board of the international journals, Semiconductor Science and Technology and Applied Physics A, and edited special issues of the journals Thin Solid Films, Surface Science, Applied Surface Science, Physica Status Solidi A, as well as editing Proceedings of the Materials Research Society (Diamond Electronics I, 956 (2007), Diamond Electronics II, 1039 (2008)). Media work has included the BBC Radio 4 programme ‘Materials World’ (2004) and ‘Diamond: The worlds most dazzling exhibition’ at the Natural History Museum, London (2006). Extensive international conference organisation includes The European Diamond Conference series (9th-19th, 1998-2008-), the Hasselt Diamond Workshop (IV-XIII, 1999-2008-) and the ‘New Diamond and Nano-Carbons’ series (NDNC, 2007,8). Richard has given more than 50 invited papers at international meetings, including the 4th International Conference on Materials for advanced Technologies (ICMAT 2007, Singapore) and the 2nd International Conference on surfaces and nanostructured materials (NanoSmat 2007, Portugal).

To date, Professor Jackman has personally graduated 16 PhD students, and has a current group of five PhD students, plus postdoctoral research fellow support. He has published a (co-edited) book, 6 book chapters, one patent, 150 journal papers and more than 250 conference papers. The Diamond Electronics Group, which Richard heads, is based within the London Centre for Nanotechnology (LCN), on UCLs campus. Research income to date is more than £4.5M, £3.5M with Richard as PI.

Within the department of Electronic and Electrical Engineering, Richard has just stepped down from the role of Undergraduate Admissions Tutor, having previously been both the departments Undergraduate Tutor and the Director of the MSc programme ‘Microwave and Optoelectronics’. Teaching centres on Semiconductor Materials and Devices at undergraduate level, and Nanotechnology at Masters level. Outreach activities include regular seminars to school sixth forms on the topics of Diamond Electronics and Nanotechnology.

Professor Jackman heads UCL’s Diamond Electronics team whose laboratories are within the London Centre for Nanotechnology. Diamond is widely known as a gemstone, but few people appreciate that the use of this incredible material for purely decorative purposes is to truly waste an important Engineering material. The properties of diamond can be summarised as:

  • Extreme mechanical hardness (~90 GPa)
  • Strongest known material, highest bulk modulus (1.2 x 1012 N/m2), lowest compressibility (8.3 x 10-13 m2/ N)
  • Biologically compatible, and a tissue equivalent for radiation (6)
  • Very resistant to chemical corrosion
  • Wide band gap (5.5eV, 225nm), excellent electrical insulator (room temperature resistivity is ~1016 Ω cm)
  • Broad optical transparency from the deep UV to the far IR region
  • High intrinsic carrier mobilities (4500 cm2/Vs electrons, 3800 cm2/Vs holes)
  • Can be doped p-type (boron) and n-type (phosphorus)
  • Highest saturated carrier velocities
  • Highest electric field breakdown strength
  • Highest thermal conductivity (at room temperature 2 x 103 W / m / K)
  • Low dielectric constant
  • High electron ionisation energy
  • High atomic displacement energy
  • Highest acoustic wave velocity
  • Negative electron affinity

In short, ideal diamond is an Electronic Device Engineers dream material! However, real diamond is far from being ideal. Natural diamond is a highly variable material in terms of properties and ‘high pressure-high temperature (HPHT)’ grown diamond impure and only available in small sizes. In contrast the use of chemical vapour deposition (CVD) techniques for the metastable growth of diamond at low pressures and relatively low temperatures enables large area diamond films and free standing diamond to be produced. State-of-the-art single crystal CVD material now has properties that surpass the very best natural diamond crystals. Material grown on substrates other than diamond is polycrystalline in nature, and the grain boundaries that are present degrade the electrical properties of the films. Two approaches are currently used to limit the impact of this problem. One of to grow very thick films with large grain sizes such that devices can be fabricated with minimal interaction with grain boundaries, the other is to nucleate the growing diamond film with extremely small (5nm) diamond seed crystals to enable very thin layers of nanocrystalline diamond to be produced, such that the grain boundaries, though numerous, have very little volume do not support impurities (such as non-diamond carbon). At UCL we grow, and use, all three forms of diamond, single crystal, microcrystalline and nanocrystalline.

A further issue to be confronted is doping. Diamond is a very dense material and it is difficult to get other elements to occupy substitutional sites with distorting the diamond lattice. This distortion leads to an appreciable ‘activation energy’ being required to generate free carriers, and results in so-called ‘deep’ acceptor and donor states. For example, boron creates p-type diamond but with an activation energy of 0.37eV, where as the formation of free electrons to yield n-type character in diamond from phosphorus requires 0.6eV of energy. This means that at room temperature most dopant atoms are not active and simply lead to unwanted carrier scattering processes.

Finally there is the issue of material processing and integration. The growth temperature of CVD diamond (~8500C) is high compared to the thermal budget allowed for most conventional electronic structures, making direct integration with existing device technology difficult. Etching and metallization also offer extra challenges to the device Engineer.

The good news is that we are finding ways to overcome these challenges and diamond is finding application in a number of device fields, namely:

  • High frequency electronics
  • High power electronics
  • ‘Radiation hard’ electronics
  • High temperature electronics
  • Corrosion resistant electronics
  • Biocompatible electronics
  • Space-bound electronics
  • Optoelectronics (deep UV)
  • Radiation detectors
  • Biosensors
  • High frequency SAWS
  • NEMS and MEMS
  • Cold cathodes
  • Electrochemical sensors
  • Quantum computing

The groups current projects include

  • High power diamond-based insulated-gate bipolar junction transistors for high temperature aerospace applications.  This  programme enjoys the support of Element Six  (formally De Beers Industrial Diamond) and Rolls-Royce plc.
  • High performance nanostructured diamond field effect transistors for high power high frequency operation. The novel use of delta-doped diamond layers. Project supported by Diamond Microwave Devices (DMD) Ltd and Element Six Ltd.
  • Growth of n-type and p-type diamond using CVD methods, and characterisation.  Here we actively collaborate with CEA, in  Saclay, France, and NIMS in Tsukuba, Japan.
  • Novel diamond structures for high power diamond devices.  Recently  patented ideas are being explored with the support of Garfiold Ltd.
  • Understanding the properties of ultra-nanocrystalline and  nanocrystalline diamond films (UNCD, NCD).  Characterising these novel forms of diamond and identifying their potential within nano-device technology, in collaboration with the Naval research Labs (Washington) and Argonne National Labs, both in the USA.
  • Diamond devices for implantable electronics – an EU programme  known as ‘DREAMS’ with partners in France, Germany and the  Czech Republic.
  • Diamond-neuronal interfacing.  Growth of living material onto diamond  field effect transistors, and two-way communication.  A project in  collaboration with the department of Pharmacology at UCL.
  • ‘Silicon-on-diamond (SOD)’ – a replacement for SOI technology in  next generation CMOS?  A project in collaboration with SOITEC (France),  Sp3 technologies (USA) and CEA (France).
  • Diamond Surface Conductivity – ultra-shallow p-type layers for device  applications – a collaboration with the University of Oxford (Chemistry) 
and the Technical University of Munich (Walter Schottky Institute).
  • Diamond radiation and photodetectors.  Patented and licensed technology for the generation of alpha, neutron and extreme UV sensors. Partners – British Aerospace Systems plc, CEA (Saclay, France) and AST Ltd.
  • Diamond NEMS. Nano-electro-mechanical systems are being fabricated using FIB and RIE techniques to realize diamond-based cantilever and SAW biosensors.

View Publications by Year - [Expand all / Hide all]

    2012

    • Edgington, R., Ruslinda, A. R., Sato, S., Ishiyama, Y., Tsuge, K., Ono, T., Kawarada, H., Jackman, R. B. (2012). Boron δ-doped (111) diamond solution gate field effect transistors. Biosensors and Bioelectronics 33(1), 152-157
    • Edgington, R., Ruslinda, A. R., Sato, S., Ishiyama, Y., Tsuge, K., Ono, T., Kawarada, H., Jackman, R. B. (2012). Boron delta-doped (1 1 1) diamond solution gate field effect transistors. Biosens Bioelectron 33(1), 152-157 doi:10.1016/j.bios.2011.12.044.
    • Edgington, R., Sato, S., Ishiyama, Y., Morris, R., Jackman, R. B., Kawarada, H. (2012). Growth and electrical characterisation of 6-doped boron layers on (111) diamond surfaces. Journal of Applied Physics 111(3)

    2011

    • Ahmad, R. K., Parada, A. C., Jackman, R. B. (2011). Nanodiamond-gated silicon ion-sensitive field effect transistor. APPL PHYS LETT 98(15), 153507 doi:10.1063/1.3568887.
    • Antoniadou, E. V., Ahmad, R. K., Jackman, R. B., Seifalian, A. M. (2011). Next generation brain implant coatings and nerve regeneration via novel conductive nanocomposite development. Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS , 3253-3257

    2010

    • Ahmad, R. K., Kupfer, B. Z., Zainal, A., Jackman, R. B. (2010). Fabrication and characterisation of triangle-faced single crystal diamond micro-cantilevers. Diamond and Related Materials 19, 450-457 doi:10.1016/j.diamond.2010.01.046.
    • Ahmad, R. K., Parada, A. C., Tumilty, N., Jackman, R. B. (2010). Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation. APPL PHYS LETT 97(20), 203503 doi:10.1063/1.3518060.
    • Ahmad, R. K., Parade, A. C., Hudziak, S., Chaudhary, A., Jackman, R. B. (2010). Nanodiamond-coated silicon cantilever array for chemical sensing. APPL PHYS LETT 97(9), 093103 doi:10.1063/1.3484277.
    • Bevilacqua, M., Tumilty, N., Mitra, C., Ye, H., Feygelson, T., Butler, J. E., Jackman, R. B. (2010). Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study. JOURNAL OF APPLIED PHYSICS 107, 033716 doi:10.1063/1.3291118.
    • Bevilacqua, M., Tumilty, N., Mitra, C., Ye, H., Feygelson, T., Butler, J. E., Jackman, R. B. (2010). Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study. Journal of Applied Physics 107(3), 033716-033716-8 doi:10.1063/1.3291118.
    • HUDZIAK, S., Ahmed, R., Parada, A., Chaudhary, A., Jackman, R. (2010). Nanodiamond-coated silicon cantilever array for chemical sensing. Applied Physics Letters 97, 093103 doi:10.1063/1.3484277. Publisher URL
    • Thalhammer, A., Edgington, R. J., Cingolani, L. A., Schoepfer, R., Jackman, R. B. (2010). The use of nanodiamond monolayer coatings to promote the formation of functional neuronal networks. Biomaterials 31(8), 2097-2104 doi:10.1016/j.biomaterials.2009.11.109.
    • Thalhammer, A., Edgington, R. J., Cingolani, L. A., Schoepfer, R., Jackman,, R, B. (2010). The use of nanodiamond monolayer coatings to promote the formation of functional neuronal networks. Biomaterials 31, 2097-2104 doi:10.1016/j.biomaterials.2009.11.109.
    • Tumilty, N., Kasharina, L., Prokhoda, T., Sinelnikov, B., Jackman, R. B. (2010). Synthesis of carbon nanotubes on single crystal diamond. Carbon 48(11), 3027-3032

    2009

    • Bevilacqua, M., Chaudhary, A., Jackman, R. B. (2009). The influence of ammonia on the electrical properties of detonation nanodiamond. Journal of Applied Physics 106, 123704- doi:10.1063/1.3272912.
    • Bevilacqua, M., Jackman, R. B. (2009). Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices. Applied Physics Letters 95, 243501- Author URL
    • Tumilty, N., Welch, J., Balmer, R., Wort, C., Lang, R., R, B. (2009). Multiple conduction paths in boron delta-doped diamond structures. Applied Physics Letters 94(5), 052107-1-052107-3 doi:10.1063/1.3075860. Author URL
    • Tumilty, N., Welch, J., Lang, R., Wort, C., Balmer, R., Jackman,, R, B. (2009). An impedance spectroscopic investigation of the electrical properties of delta-doped diamond structures. Journal of Applied Physics 106, 103707- Author URL

    2008

    • Nebel, C., Jackman, R. B., Nesladek, M., Nemanich, R. (Eds.) (2008). Diamond Electronics - Fundamentals to Applications II. Proceedings of the Materials Research Society 1039, 1-180 Pittsburgh:
    • Bevilacqua, M., Patel, S., Chaudhary, A., Ye, H., Jackman, R. B. (2008). Electrical properties of aggregated detonation nanodiamonds. Applied Physics Letters 93(13), 132115- doi:10.1063/1.2996026.
    • Bevilacqua, M., Patel, S., Chaudhary, A., Ye, H., Jackman, R. B. (2008). Electrical properties of aggregated detonation nanodiamonds. Virtual Journal of Nanoscale Science & Technology 18(16)
    • Bevilacqua, M., Tumilty, N., Chaudhary, A., Ye, H., Butler, J. E., Jackman, R. B. (2008). Nanocrystalline diamond as a dielectric for SOD applications. MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: DIAMOND ELECTRONICS - FUNDAMENTALS TO APPLICATIONS II. ( Vol. 1039 pp.235-246). Pittsburgh, USA: Materials Research Society.
    • Williams, O. A., Nesladek, M., Daenen, M., Michaelson, S., Hoffman, A., Osawa, E., Haenen, K., Jackman, R. B. (2008). Growth, electronic properties and applications of nanodiamond. Diamond and Related Materials 17(7-10), 1080-1088 doi:10.1016/j.diamond.2008.01.103.
    • Ye, H., Tumilty, N., Bevilacqua, M., Curat, S., Nesladek, M., Bazin, B., Bergonzo, P., Jackman, R. B. (2008). Electronic properties of homoepitaxial (111) highly boron-doped diamond films. Journal of Applied Physics 103, 054503-

    2007

    • Bergonzo, P., Gat, R., Jackman, R. B., Nebel, C. (Eds.) (2007). Diamond Electronics - Fundamentals to Applications. Proceedings of the Materials Research Society 956, 1-245 Pittsburgh:
    • Bennet, A., Gaudin, O., Williams, O. A., Foord, J. S., Jackman, R. B. (2007). Diamond based ion-sensitive field effect transistors for cellular biosensing. Proceedings of the Materials Research Society (Diamond Electronics: Fundamentals to Applications). ( Vol. 956 pp.221-227). Pittsburgh, USA: MRS.
    • Jackman, R. B., Bergonzo, P. (2007). Diamond-Based Radiation and Photon Detectors. In Thin film diamond, Vol. II ( pp.197-309). London: Academic Press.
    • Williams, O. A., Gruen, D., Jackman, R. B. (2007). Electronic Properties and Applications of Ultrananocrystalline Diamond. In Synthesis Properties and Applications of Ultrananocrystalline Diamond ( pp.373-382). NATO Science Series II Mathematics, Physics and Chemistry.
    • Ye, H., Tumilty, N., Garner, D., Jackman, R. B. (2007). Device simulation and design optimization for diamond based insulated-gate bipolar transistors. Proceedings of the Materials Research Society (Diamond Electronics: Fundamentals to Applications). ( Vol. 956 pp.275-280). Pittsburgh, USA: MRS.

    2006

    • Jackman, R. B., Nesladek, M., Haenen, K. (Eds.) (2006). Proceedings of 11th International Workshop on Surface and Bulk Defects in CVD Diamond Films (SBDD) Hasselt, Belgium, 02-2006. Physica Status Solidi (A): Applications and Materials 203(12), 3001-3197 WEINHEIM, GERMANY:
    • Jackman, R. B. (2006). Rocks and Rolls. The Engineer
    • Nguyen, T. P., Le Rendu, P., Gaudin, O., Lee, A. J. T., Huang, C. H., Jackman, R. B. (2006). Defect states investigation in poly(2-methoxy,5-(2 ' ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV). Thin Solid Films 511, 338-341

    2005

    • Nesladek, M., Haenen, K., Jackman, R. B. (Eds.) (2005). Proceedings of Surface and Bulk Defects in Diamond X. Physica Status Solidi (A): Applications and Materials 202(11), 2051-2239
    • Curat, S., Ye, H., Gaudin, O., Jackman, R. B., Koizumi, S. (2005). An impedance spectroscopic study of n-type phosphorus-doped diamond. Journal of Applied Physics 98(7), 73701-73701-6 doi:10.1063/1.2058183.
    • Garrido, J. A., Hardl, A., Kuch, S., Stutzmann, M., Williams, O. A., Jackman, R. B. (2005). PH sensors based on hydrogenerated diamond surfaces. Applied Physics Letters 86, 073504-1-073504-3
    • Specht, C. G., Williams, O. A., Jackman, R. B., Schoepfer, R. (2005). Erratum: Ordered growth of neurons on diamond (Biomaterials (2004) 25 (4073-4078) DOI: 10.1016/j.biomaterials.2003.11.006). Biomaterials 26(7), 828-828
    • Specht, C. G., Williams, O. A., Jackman, R. B., Schoepfer, R. (2005). Ordered growth of neurons on diamond (vol 25, pg 4073, 2004). BIOMATERIALS 26(7), 828-828 doi:10.1016/j.biomaterials.2004.06.022.
    • Ye, H. T., Gaudin, O., Jackman, R. B. (2005). AC impedance behaviour of black diamond films. Journal of Materials Science and Technology 21, 879-882
    • Ye, H. T., Yan, H. X., Jackman, R. B. (2005). Dielectric properties of single crystal diamond. Semiconductor Science and Technology 20, 296-298

    2004

    • Bergonzo, P., Jackman, R. B. (2004). Chapter 6 Diamond-based radiation and photon detectors. Semiconductors and Semimetals 77(C), 197-309
    • Bergonzo, P., Jackman, R. B. (2004). Diamond-based radiation and photon detectors. Semiconductors and Semimetals 77, 197-309
    • Curat, S., Ye, H., Williams, O. A., Foord, J. S., Jackman, R. B. (2004). Surface conductive diamond: Homoepitaxial film growth for the control of carrier transport. Meeting Abstracts , 1820-1820
    • Flannery, C. M., Whitfield, M. D., Jackman, R. B. (2004). Surface acoustic wave properties of freestanding diamond films. IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control 51(3), 368-371
    • Foord, J. S., Bennett, A., Peel, M., Jackman, R. B. (2004). Diamond photocathodes in gaseous environments. Diamond and Related Materials 13, 900-903
    • Gruen, D. M., Curtiss, L. A., Zapol, P., Sternberg, M., Williams, O. A., Gerbi, J. E., Jackman, R. B., Curat, S., Kohn, E., Zimmerman, T., Kubovic, M., Denisenko, A., Swain, G. M. (2004). Ultrananocrystalline diamond films as electronic materials. Meeting Abstracts , 1818-1818
    • Jackman, R. B. (2004). Materials World, BBC Radio 4 (Quentin Cooper) Interviewed on the subject of 'Diamond Electronics' (15 mins of 30 min show).
    • Jackman, R. B. (2004). Neuronal growth on diamond. Materials Today
    • Mer, C., Pomorski, M., Bergonzo, R., Tromson, D., Rebisz, M., Domenech, T., Vuillemin, J. C., Foulon, F., Nesladek, M., Williams, O. A., Jackman, R. B. (2004). An insight into neutron detection from polycrystalline CVD diamond films. Diamond and Related Materials 13, 791-795
    • Nguyen, T. P., Ip, J., Gaudin, O., Jackman, R. B. (2004). Determination of localized trap parameters in organic semiconductors using charge based deep level transient spectroscopy (Q-DLTS). The European Physical Journal - Applied Physics 27(1-3), 219-222 doi:10.1051/epjap:2004079.
    • Nguyen, T. P., Le Rendu, P., Leveque, P., Ip, J., Gaudin, O., Jackman, R. B. (2004). Analysis of deep traps in 4,4 '-bis(4-dimethylaminostyryl benzene) based light emitting diode devices. ORGANIC ELECTRONICS. ( Vol. 5 pp.53-58). ELSEVIER SCIENCE BV.
    • Nguyen, T. P., Le Rendu, P., Leveque, P., Ip, J., Gaudin, O., Jackman, R. B. (2004). Homoepitaxial diamond growth for the control of surface conductive carrier transport properties. Organic Electronics 5, 53-58
    • Specht, C. G., Williams, O. A., Schoepfer, R., Jackman, R. B. (2004). Ordered growth of neurons on diamond. Biomaterials 25, 4073-4078 Author URL
    • Williams, O. A., Curat, S., Gerbi, J. E., Gruen, D. M., Jackman, R. B. (2004). Erratum: N -type conductivity in ultrananocrystalline diamond films (Appl. Phys. Lett. (2004) 85 (1680)). Applied Physics Letters 85(21), 5106-5106
    • Williams, O. A., Curat, S., Gerbi, J. E., Gruen, D. M., Jackman, R. B. (2004). n-type conductivity in ultrananocrystalline diamond films (vol 85, pg 1680, 2004). APPL PHYS LETT 85(21), 5106-5106 doi:10.1063/1.1829716.
    • Williams, O. A., Curat, S., Gerbi, J. E., Gruen, D. M., Jackman, R. B. (2004). n-type conductivity in ultrananocrystalline diamond films. APPL PHYS LETT 85(10), 1680-1682 doi:10.1063/1.1785288.
    • Williams, O. A., Curat, S., Gerbi, J. E., Gruen, D. M., Jackman, R. B. (2004). n-type conductivity in ultrananocrystalline diamond films. Applied Physics Letters 85, 5106-5106
    • Williams, O. A., Jackman, R. B. (2004). Diamond growth on hot-filament chemically vapour-deposited diamond for surface conductive device applications. Diamond and Related Materials 13, 166-169
    • Williams, O. A., Jackman, R. B. (2004). High growth rate MWPECVD of single crystal diamond. Diamond and Related Materials 13, 557-560
    • Williams, O. A., Jackman, R. B. (2004). Homoepitaxial diamond growth for the control of surface conductive carrier transport properties. Journal of Applied Physics 96(7), 3742-3747 doi:10.1063/1.1789275.
    • Williams, O. A., Jackman, R. B. (2004). Homoepitaxial growth for surface conductive device applications. Diamond and Related Materials 13, 166-169
    • Williams, O. A., Jackman, R. B. (2004). Homoepitaxial growth for surface conductive device applications. Diamond and Related Materials 13, 325-328

    2003

    • Chan, S. S. M., Whitfield, M. D., Jackman, R. B., Arthur, G., Goodall, F., Lawes, R. A. (2003). The effect of excimer laser etching on thin film diamond. SEMICOND SCI TECH 18(3), S47-S58
    • Chan, S. S. M., Whitfield, M. D., Jackman, R. B., Arthur, G., Goodall, F., Lawes, R. A. (2003). The effect of excimer laser etching on thin film diamond. Semiconductor Science and Technology 18, 47-58
    • Flannery, C. M., Whitfield, M. D., Jackman, R. B. (2003). Acoustic wave properties of CVD diamond. SEMICOND SCI TECH 18(3), S86-S95
    • Flannery, C. M., Whitfield, M. D., Jackman, R. B. (2003). Acoustic wave properties of CVD diamond. Semiconductor Science and Technology 18, 86-95
    • Garrido, J. A., Nebel, C. E., Todt, R., Amann, M. C., Williams, O. A., Jackman, R., Nesladek, M., Stutzmann, M. (2003). Novel in-plane gate devices on hydrogenated diamond surfaces. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. ( Vol. 199 pp.56-63). WILEY-V C H VERLAG GMBH.
    • Gaudin, O., Troupis, D. K., Nebel, C. E., Koizumi, S., Gheeraert, E., Jackman, R. B. (2003). Charge-based deep level transient spectroscopy of phosphorous-doped homoepitaxial diamond. Journal of Applied Physics 94, 5832-5843
    • Jackman, R. B. (2003). Can diamond now be a superconductor? Physics World
    • Jackman, R. B. (2003). Semiconductor Science and Technology: Preface. Semiconductor Science and Technology 18(3), 1-2
    • Jackman, R. B. (2003). Special issue: Diamond electronics - Preface. SEMICOND SCI TECH 18(3), 1-2
    • Lansley, S. P., McKeag, R. D., Whitfield, M. D., Rizvi, N., Jackman, R. B. (2003). Diamond photodetector response to deep UV excimer laser excitation. Diamond and Related Materials 12, 677-681
    • Mavroidis, C., Harris, J. J., Bougrioua, Z., Moerman, I., Jackman, R. B. (2003). Evidence of an impurity band at an n-GaN/sapphire interface. Diamond and Related Materials 12, 1127-1132
    • Snidero, E., Tromson, D., Mer, C., Bergonzo, P., Foord, J. S., Nebel, C., Williams, O. A., Jackman, R. B. (2003). Influence of the postplasma process conditions on the surface conductivity of hydrogenated diamond surfaces. Journal of Applied Physics 93, 2700-2704
    • Williams, O. A., Jackman, R. B. (2003). Surface conductivity on hydrogen terminated diamond. SEMICOND SCI TECH 18(3), S34-S40
    • Williams, O. A., Jackman, R. B. (2003). Surface conductivity on hydrogen terminated diamond. Semiconductor Science and Technology 18, 34-40
    • Williams, O. A., Jackman, R. B., Nebel, C., Foord, J. S. (2003). High carrier mobilities in black diamond. SEMICOND SCI TECH 18(3), S77-S80
    • Williams, O. A., Nebel, C., Foord, J. S., Jackman, R. B. (2003). High carrier mobilities in black diamond. Semiconductor Science and Technology 18, 77-80
    • YE, H. T., Gaudin, O., Jackman, R. B., Muret, P., Gheerart, E. (2003). DC current and AC impedance measurements on boron-doped single crystalline diamond films. Physica Status Solidi (A): Applied Research 199, 92-96
    • Ye, H., Jackman, R. B., Hing, P. (2003). Spectroscopic impedance study of nanocrystalline diamond films. Journal of Applied Physics 94(12), 7878-7882 doi:10.1063/1.1622998.

    2002

    • Bergonzo, P., Jackman, R. B. (2002). Le Materiau Diamant: Detecteur Transparent. Dossier pour la Science (Edition Francaise de Scientific American) 35, 64-68
    • Foord, J. S., Lau, C. H., Hiramatsu, M., Bennett, A., Jackman, R. B. (2002). Influence of material properties on the performance of diamond photocathodes. Diamond and Related Materials , 437-441
    • Foord, J. S., Lau, C. H., Hiramatsu, M., Jackman, R. B., Nebel, C. E., Bergonzo, P. (2002). Influence of the environment on the surface conductivity of chemical vapor deposition diamond. Diamond and Related Materials , 856-860
    • Gaudin, O., Jackman, R. B., Nguyen, T. P., Le Rendu, P. (2002). Determination of traps in poly(p-phenylene vinylene) light emitting diodes by charge-based deep level transient spectroscopy. ORGANIC AND POLYMERIC MATERIALS AND DEVICES-OPTICAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIES. ( Vol. 725 pp.93-98). MATERIALS RESEARCH SOCIETY.
    • Lansley, S. P., Gaudin, O., Ye, H. T., Rizvi, N., Whitfield, M. D., McKeag, R. D., Jackman, R. B. (2002). Imaging deep UV light with diamond-based systems. Diamond and Related Materials , 433-436
    • Lansley, S. P., Williams, O. A., Ye, H., Rizvi, N., Whitfield, M. D., McKeag, R. D., Jackman, R. B. (2002). Diamond-based 1-D imaging arrays. Physica Status Solidi (A): Applied Research , 476-481
    • Mavroidis, C., Harrris, J. J., Jackman, R. B., Harrison, I., Ansell, B. J., Bourgrioua, Z., Moerman, I. (2002). Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers. Journal of Applied Physics 94, 9835-9840
    • Nebel, C. E., Ertl, F., Sauerer, C., Stutzmann, M., Graeff, C. F. O., Bergonzo, R., Williams, O. A., Jackman, R. B. (2002). Low temperature properties of the p-type surface conductivity of diamond. Diamond and Related Materials , 351-354
    • Nebel, C. E., Sauerer, C., Ertl, F., Stutzmann, M., Graeff, C. F. O., Bergonzo, P., Williams, O. A., Jackman, R. B. (2002). Hydrogen-induced transport properties of holes in diamond surface layers. Applied Physics Letters , 4541-4543
    • Troupis, D. K., Gaudin, O., Whitfield, M. D., Jackman, R. B. (2002). Ion implantation of sulphur, boron and nitrogen in diamond: a charge-based deep level transient spectroscopic investigation. Diamond and Related Materials , 342-346
    • Williams, O. A., Jackman, R. B., Nebel, C. E. (2002). Hydrogenated black diamond: An electrical study. Physica Status Solidi (A): Applied Research (577), 584-
    • Williams, O. A., Jackman, R. B., Nebel, C. E., Foord, J. S. (2002). Black diamond: a new material for active electronic devices. Diamond and Related Materials , 396-399
    • Williams, O. A., Jackman, R. B., Rudkin, R., Atkinson, A., Ye, H. (2002). Electrical conduction in polycrystalline CVD diamond: Temperature dependent impedance measurements. Physica Status Solidi (A): Applied Research , 462-469
    • Williams, O. A., Nebel, C. E., Jackman, R. B. (2002). Hydrogenated black diamond: An electrical study. Physica Status Solidi (A): Applied Research 193, 577-584
    • Ye, H. T., Williams, O. A., Jackman, R. B. (2002). Measurement of electrical activation energy in black CVD diamond using impedance spectroscopy. International Journal of Modern Physics B 16, 4487-4492

    2001

    • Foord, J. S., Hian, L. C., Jackman, R. B. (2001). An investigation of the surface reactivity of diamond photocathodes with molecular and atomic oxygen species. Diamond and Related Materials 10, 710-714
    • Foord, J. S., Singh, N. K., Jackman, R. B., Gutierrez-Sosa, A., Proffitt, S., Holt, K. B. (2001). Reactions of xenon difluoride and atomic hydrogen at chemical vapour deposited diamond surfaces. Surface Science 488, 335-345
    • Foord, J. S., Wang, J., Lau, C. H., Hiramatsu, M., Vickers, J., Jackman, R. B. (2001). Influence of surface properties on the quantum photoyield of diamond photocathodes. Physica Status Solidi (A): Applied Research 186, 227-233
    • Gaudin, O., Nguyen, T. P., Le Rendu, P., Jackman, R. B. (2001). Determination of traps in poly(p-phenylene vinylene) light emitting diodes by charge-based deep level transient spectroscopy. Journal of Applied Physics 90, 4196-4204
    • Gaudin, O., Whitfield, M. D., Foord, J. S., Jackman, R. B. (2001). Deep level transient spectroscopy of CVD diamond: the observation of defect states in hydrogenated films. Diamond and Related Materials 10, 610-614
    • Jackman, R. B. (2001). Optoelectronic properties of diamond. Properties of Diamond (INSPEC Datareview Series) , 104-107 London:
    • Sauerer, C., Ertl, F., Nebel, C. E., Stutzmann, M., Bergonzo, P., Williams, O. A., Jackman, R. B. (2001). Low temperature surface conductivity of hydrogenated diamond. Physica Status Solidi (A): Applied Research 186, 241-247
    • Whitfield, M. D., Lansley, S. P., Gaudin, O., McKeag, R. D., Rizvi, N., Jackman, R. B. (2001). Diamond photoconductors: operational lifetime and radiation hardness under deep-UV excimer laser irradiation. Diamond and Related Materials 10, 715-721
    • Whitfield, M. D., Lansley, S. P., Gaudin, O., McKeag, R. D., Rizvi, N., Jackman, R. B. (2001). Diamond photodetectors for next generation 157-nm deep-UV photolithography tools. DIAMOND AND RELATED MATERIALS. ( Vol. 10 pp.693-697). ELSEVIER SCIENCE SA.
    • Whitfield, M. D., Lansley, S. P., Gaudin, O., McKeag, R. D., Rizvi, N., Jackman, R. B. (2001). Diamond photodetectors for next generation 157-nm deep-UV photolithography tools. Diamond and Related Materials 10, 710-714
    • Whitfield, M. D., Lansley, S. P., Gaudin, O., McKeag, R. D., Rizvi, N., Jackman, R. B. (2001). High speed diamond photoconductive devices for UV detection. Physica Status Solidi (A): Applied Research 185, 99-106
    • Whitfield, M. D., Lansley, S. P., Gaudin, O., McKeag, R. D., Rizvi, N., Jackman, R. B. (2001). High-speed diamond photoconductors: a solution for high rep-rate deep-UV laser applications. Diamond and Related Materials 10, 650-656
    • Whitfield, M. D., Rizvi, N., Lansley, S. P., Gaudin, O., Jackman, R. B., McKeag, R. D. (2001). Diamond-based deep UV sensors for lithography applications. Proceedings of SPIE. ( Vol. 4274 pp.40-47). Bellingham, US: SPIE - The International Society for Optical Engineering. Publisher URL
    • Williams, O. A., Whitfield, M. D., Foord, J. S., Butler, J. E., Nebel, C. E., Jackman, R. B. (2001). Formation of shallow acceptor states in the surface region of thin film diamond. Applied Physics Letters 78, 3460-3462
    • Williams, O. A., Whitfield, M. D., Jackman, R. B., Foord, J. S., Butler, J. E., Nebel, C. E. (2001). Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond. Diamond and Related Materials 10, 423-428

    2000

    • Baral, B., Pang, L. Y. S., Foord, J. S., Jackman, R. B. (2000). Interaction of organo-sulfur compounds with CVD diamond surfaces. Diamond and Related Materials 9, 1167-1170
    • Jackman, R. B. (2000). Diamond Electronics. The Independent
    • Jackman, R. B. (2000). Properties of diamond for sensor applications. Proceedings: 3rd International Conference and Poster Exhibition: micro materials: April 17-19, 2000, Berlin, Germany. ( pp.856-856). Dresden, Germany: Goldenbogen. Publisher URL
    • Lansley, S. P., Gaudin, O., Whitfield, M. D., Jackman, R. B. (2000). Diamond deep UV photodetectors: reducing charge decay times for 1-kHz operation. Diamond and Related Materials 9, 195-200
    • Lansley, S. P., Gaudin, O., Whitfield, M. D., Jackman, R. B. (2000). Diamond electronics: Defect passivation for high performance photodetector operation. Physica Status Solidi (A): Applied Research 181, 121-128
    • Looi, H. J., Pang, L. Y. S., Molloy, A. B., Jones, F. H., Whitfield, M. D., Foord, J. S., Jackman, R. B. (2000). Mechanisms of surface conductivity in thin film diamond: Application to high performance devices. Carbon 37(5), 801-805
    • Looi, H. J., Pang, L. Y. S., Whitfield, M. D., Jackman, R. B. (2000). Engineering low resistance contacts on p-type hydrogenated diamond surfaces. Diamond and Related Materials 9, 975-981
    • Proffitt, S., Thompson, C. H. B., Gutierrez-Sosz, A., Foord, J. S., Jackman, R. B. (2000). Understanding the chemistry of low temperature diamond growth: An investigation into the interaction of chlorine and atomic hydrogen at CVD diamond surfaces. Diamond and Related Materials 9, 246-250
    • Whitfield, M. D., Audic, B., Flannery, L. B., Kehoe, L. H., Crean, G. M., Jackman, R. B. (2000). Characterization of acoustic Lamb wave propagation in polycrystalline diamond films by laser ultrasonics. Journal of Applied Physics 88, 2984-2993
    • Whitfield, M. D., Foord, J. S., Jackman, R. B. (2000). Spatially resolved optical emission spectroscopy of the secondary glow observed during biasing of a microwave plasma. Vacuum 56, 15-23
    • Whitfield, M. D., Foord, J. S., Savage, J. A., Jackman, R. B. (2000). Characterisation of the secondary glow region of a biased microwave plasma by optical emission spectroscopy. DIAMOND AND RELATED MATERIALS. ( Vol. 9 pp.305-310). ELSEVIER SCIENCE SA.
    • Whitfield, M. D., Lansley, S. P., Gaudin, O., McKeag, R. D., Rizvi, N., Jackman, R. B. (2000). Diamond UV photoconductors: Defect passivation for high speed operation. ELECTROCHEMICAL SOCIETY SERIES. ( Vol. 99 pp.322-329). Pennington, NJ, USA: Electrochemical Society.
    • Whitfield, M. D., Looi, H. J., Lansley, S. P., Foord, J. S., Jackman, R. B. (2000). Hydrogen doped thin film diamond phototransistor/photodiode structures for the detection of UV radiation. DIAMOND MATERIALS VI. ( Vol. 99 pp.330-339). ELECTROCHEMICAL SOCIETY INC.
    • Whitfield, M. D., Savage, J. A., Foord, J. S., Jackman, R. B. (2000). Characterisation of biased microwave plasmas with optical emission spectroscopy. Diamond and Related Materials 9, 305-310
    • Whitfield, M. D., Savage, J. A., Jackman, R. B. (2000). Nucleation and growth of diamond films on single crystal and polycrystalline tungsten substrates. Diamond and Related Materials 9, 262-268
    • Williams, D. A., Williams, D. E., Clary, D., Farebrother, A., Fisher, A., Gingell, J., Jackman, R., Mason, N., Meijer, A., Perry, J., Price, S. D., Rawlings, J. (2000). The energetics and efficiency of H(2) formation on the surface of simulated interstellar grains. In Combes, F., Pineau des Forets, G. (Eds.). Molecular Hydrogen in Space ( pp.99-106). Paris: Cambridge Univeristy Press.
    • Williams, O., Whitfield, M. D., Foord, J. S., Butler, J. E., Jackman, R. B. (2000). Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond. Diamond Films 2000. Porto, Portugal:

    1999

    • Jackman, R. B., Petty, M. (Eds.) (1999). Proceedings of the 14th International Vacuum Congress (IVC-14), 10th International conference on Solid Surfaces (ICSS-10), 5th International Conference on Nanometre-scale science and technology (NANO-5). Surface Science 435, 1-925
    • Jackman, R. B., Petty, M. (Eds.) (1999). Proceedings of the 14th International Vacuum Congress (IVC-14). Thin Solid Films 343-344, 1-650
    • Jackman, R. B., Petty, M. (Eds.) (1999). Proceedings of the 14th International vacuum Congress (IVC-14). Applied Surface Science 145, 1-747
    • Bergonzo, P., Foulon, F., Marshall, R. D., Jany, C., Brambilla, A., McKeag, R. D., Jackman, R. B. (1999). Thin film diamond alpha detectors for dosimetry applications. Diamond and Related Materials 8, 952-955
    • Chalker, P. R., Joyce, T. B., Johnston, C. M., Huddlestone, J., Whitfield, M. D., Jackman, R. B. (1999). Fabrication of aluminium nitride diamond and gallium nitride diamond SAW devices. Diamond and Related Materials 8, 309-313
    • Gaudin, O., Watson, S., Lansley, S. P., Looi, H. J., Whitfield, M. D., Jackman, R. B. (1999). Optimising the electronic and optoelectronic properties of thin film diamond. Diamond and Related Materials 8, 623-626
    • Gaudin, O., Watson, S., Lansley, S. P., Looi, H. J., Whitfield, M. D., Jackman, R. B. (1999). Optimising the electronic and optoelectronic properties of thin-film diamond. DIAMOND AND RELATED MATERIALS. ( Vol. 8 pp.886-891). ELSEVIER SCIENCE SA.
    • Jackman, R. B. (1999). Diamond UV Photodetectors for Laser Applications. SPIE (Lasers in Synthesis, Charactreisation and Processing of Diamond). ( Vol. 3483 pp.111-116).
    • Jackman, R. B., Petty, M. (1999). 14th International Vacuum Congress (IVC-14) - 10th International Conference on Solid Surfaces (ICSS-10) - 5th International Conference on Nanometre-scale Science and Technology (NANO-5) - 10th International Conference on Quantitative Surface Analysis (QSA-10) - 31 August 4 September 1998, International Convention Centre, Birmingham, UK - Preface. VACUUM 53(1-2), XIII-XIII
    • Jackman, R. B., Petty, M. (1999). 14th International Vacuum Congress (IVC-14) - 10th International Conference on Solid Surfaces (ICSS-10) - 5th International Conference on Nanometre-Scale Science and Technology (NANO-5) - 10th International Conference on Quantitative Surface Analysis (QSA-10) - International Convention Centre, Birmingham, UK - 31 August-4 September 1998 - Preface. SURF SCI 435, XV-XV
    • Jackman, R. B., Petty, M. (1999). 14th International Vacuum Congress (IVC-14) - 10th International Conference on Solid Surfaces (ICSS-10) - 5th International Conference on Nanometre-scale Science and Technology (NANO-5) - 10th International Conference on Quantitative Surface Analysis (QSA-10) - International Convention Centre, Birmingham, UK, 31 August-4 September 1998 - Preface. APPL SURF SCI 144-45, XI-XI
    • Jackman, R. B., Petty, M. (1999). Proceedings of the Thin Film and Electronic Materials and Processing Sessions from the 14th International Vacuum Congress, Birmingham, UK, 31 August-4 September, 1998 - Preface. THIN SOLID FILMS 343, XIII-XIII
    • Lansley, S. P., Looi, H. J., Whitfield, M. D., Jackman, R. B. (1999). A thin-film diamond phototransistor. Applied Physics Letters 74, 615-617
    • Lansley, S. P., Looi, H. J., Whitfield, M. D., Jackman, R. B. (1999). An optically activated diamond field effect transistor. Diamond and Related Materials 8, 946-951
    • Looi, H. J., Lansley, S. P., Whitfield, M. D., Jackman, R. B. (1999). Metal-semiconductor-metal photodiodes fabricated from thin-film diamond. Applied Physics Letters 74, 3332-3334
    • Looi, H. J., Pang, L. Y. S., Whitfield, M. D., Foord, J. S., Jackman, R. B. (1999). Progress towards high power thin film diamond transistors. Diamond and Related Materials 8, 966-971
    • Looi, H. J., Pang, L. Y. S., Whitfield, M. D., Foord, J. S., Jackman, R. B. (1999). The effect of hydrogen on the electronic properties of CVD diamond films. Thin Solid Films 344, 623-626
    • Probert, S. J., Profitt, S. S., Whitfield, M. D., Foord, J. S., Jackman, R. B. (1999). Field emission from thin film diamond grown using a magnetically enhanced radio frequency plasma source. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 17(2), 719-722 doi:10.1116/1.590626.
    • Profitt, S. S., Probert, S. J., Whitfield, M. D., Foord, J. S., Jackman, R. B. (1999). Growth of nanocrystalline diamond films for low field electron emission. Diamond and Related Materials 8, 768-771
    • Whitfield, M. D., Audic, A., Flanery, C. M., Kehoe, L. P., Crean, G. M., Jackman, R. B. (1999). Acoustic wave propagation in free standing CVD diamond: Influence of film quality and temperature. Diamond and Related Materials 8, 732-737

    1998

    • Bergonzo, P., Foulon, F., Marshall, R. D., Jany, C., Brambilla, A., McKeag, R. D., Jackman, R. B. (1998). High collection efficiency CVD diamond alpha detectors. IEEE Transactions on Nuclear Science 45, 370-373
    • Bergonzo, P., Foulon, F., Marshall, R. D., Jany, C., Brambilla, A., Mckeag, R. D., Jackman, R. B. (1998). High Collection Efficiency Thin Film Diamond Particle Detectors. Semiconductors for room-temperature radiation detector applications II: symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. ( Vol. 487 pp.441-446). Pittsburgh, US: Materials Research Society. Publisher URL
    • Foord, J. S., Loh, K. P., Jackman, R. B. (1998). Surface studies of the reactivity of methyl, acetylene and atomic hydrogen at CVD diamond surfaces. Surface Science 399, 1-14
    • Jackman, R. B. (1998). CVD Diamond for UV and Particle Detectors. In Dischler, B., Wild, C. (Eds.). Low Pressure Synthetic Diamond: Manufacturing and Applications' ( ). Heidelberg: Springer-Verlag.
    • Jackman, R. B. (1998). The Works; Diamond Electronics, BBC World Service.
    • Jones, F. H., Molley, A. B., Loh, K. P., Foord, J. S., Jackman, R. B. (1998). Photoelectron spectroscopy studies of barium films on diamond with respect to the modification of negative electron affinity characteristics. Diamond and Related Materials 7, 651-655
    • Loh, K. P., Foord, J. S., Jackman, R. B. (1998). Reactive chemistry of C(2)H(x) species on CVD diamond. Diamond and Related Materials 7, 243-246
    • Looi, H. J., Foord, J. S., Jackman, R. B. (1998). High carrier mobility in polycrystalline thin film diamond. Applied Physics Letters 72, 353-355
    • Looi, H. J., Jackman, R. B. (1998). Hydrogen "doped" thin film diamond field effect transistors for high power applications. Solid State Electronics 42, 2215-2223
    • Looi, H. J., Pang, L. Y. S., Jackman, R. B. (1998). Thin film diamond field effect transistors for high-power applications. Power semiconductor materials and devices: symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. ( Vol. 483 pp.63-68). Pittsburgh, US: Materials Research Society. Publisher URL
    • Looi, H. J., Pang, L. Y. S., Molloy, A. B., Jones, F. H., Foord, J. S., Jackman, R. B. (1998). An insight into the mechanism of surface conductivity in thin film diamond. Diamond and Related Materials 7, 550-555
    • Looi, H. J., Pang, L. Y. S., Molloy, A. B., Jones, F., Whitfield, M. D., Foord, J. S., Jackman, R. B. (1998). Mechanisms of surface conductivity in thin film diamond: Application to high performance devices. Carbon 37, 801-805
    • Looi, H. J., Pang, L. Y. S., Wang, Y., Whitfield, M. D., Jackman, R. B. (1998). Enhancement mode metal-semiconductor field effect transistors from thin film polycrystalline diamond. IEEE Electron Device Letters 19, 513-518
    • Looi, H. J., Pang, L. Y. S., Wang, Y., Whitfield, M. D., Jackman, R. B. (1998). Enhancement mode metal-semiconductor field effect transistors from thin-film polycrystalline diamond. IEEE Electron Device Letters 19(4), 112-114
    • Looi, H. J., Pang, L. Y. S., Wang, Y., Whitfield, M. D., Jackman, R. B. (1998). High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond. Diamond and Related Materials 7, 565-568
    • Looi, H. J., Pang, L. Y. S., Whitfield, M. D., Foord, J. S., Jackman, R. B. (1998). High performance devices from surface conducting thin film diamond. Carbon 37, 817-822
    • McKeag, R. D., Jackman, R. B. (1998). Diamond UV photodetectors: sensitivity and speed for visible blind applications. Diamond and Related Materials 7, 513-518
    • Whitfield, M. D., Audic, B., Flannery, C. M., Kehoe, L. P., Crean, G. M., Johnston, C., Chalker, P. R., Jackman, R. B. (1998). Polycrystalline diamond films for acoustic wave devices. Diamond and Related Materials 7, 533-539

    1997

    • Baral, B., Foord, J. S., Jackman, R. B. (1997). Enhancing low field electron emission from polycrystalline diamond. Diamond and Related Materials 6, 869-873
    • Foord, J. S., Loh, K. P., Jackman, R. B. (1997). Modification of the electronic properties of CVD diamond by the adsorption of alkali metals and their oxides. Proceedings of the 4th NIRIM International Symposium on Advanced Materials. ( Vol. 4 pp.47-52).
    • Jackman, R. B. (1997). Modification of the electronic properties of CVD diamond by the adsorption of alkali metals and their oxides. 4th NIRIM Int. Symp. on Adv. Mat., Tsukuba, Japan. ( pp.47-52). Proc. 4th NIRIM Int. Symp. on Adv. Mat., Tsukuba, Japan:
    • Jackman, R. B. (1997). Polycrystalline diamond FETs for high temeparture applications. HITEN International News
    • Loh, K. P., Foord, J. S., Egdell, R. G., Jackman, R. B. (1997). Tuning the electron affinity of CVD diamond with adsorbed caesium and oxygen layers. Diamond and Related Materials 6, 874-878
    • Loh, K. P., Foord, J. S., Jackman, R. B. (1997). Diamond growth chemistry: Its observation using real time in situ molecular beam scattering techniques. Diamond and Related Materials 6, 219-223
    • Marshall, R. D., Whitfield, M. D., Tracey, S., Thompson, D. J., Foord, J. S., Jackman, R. B. (1997). Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond. Diamond and Related Materials 6, 676-680
    • McKeag, R. D., Jackman, R. B. (1997). Diamond photodetectors for UV laser-based applications. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE). ( Vol. 3484 pp.182-194). Bellingham, USA: SPIE.
    • McKeag, R. D., Marshall, R. D., Baral, B., Chan, S. M. M., Jackman, R. B. (1997). Photoconductive properties of thin film diamond. Diamond and Related Materials 6, 374-380
    • Pang, L. Y. S., Chan, S. M. M., Chalker, P. R., Johnston, C., Jackman, R. B. (1997). Thin film diamond metal-insulator field effect transistor for high temperature applications. Materials Science and Engineering: B 46, 124-128
    • Pang, L. Y. S., Chan, S. M. M., Johnston, C., Chalker, P. R., Jackman, R. B. (1997). A thin film diamond p-channel field-effect transistor. Applied Physics Letters 70, 339-341
    • Pang, L. Y. S., Chan, S. S. M., Johnston, C., Chalker, P. R., Jackman, R. B. (1997). High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor. Diamond and Related Materials 6(2-4), 333-338
    • Whitfield, M. D., Rodway, D., Savage, J. A., Foord, J. S., Jackman, R. B. (1997). Biased enhanced nucleation of diamond on metals: An OES and electrical investigation. Diamond and Related Materials 6, 658-663

    1996

    • Baral, B., Chan, S. M. M., Jackman, R. B. (1996). Cleaning thin-film diamond surfaces for device fabrication: An Auger electron spectroscopic study. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 14(4), 2303-2307 doi:10.1116/1.580063.
    • Chan, S. M. M., McKeag, R. D., Pang, L. Y. S., Whitfield, M. D., Jackman, R. B. (1996). Thin film diamond UV photodetectors: Photodiodes compared with photoconductive devices for highly selective wavelength response. Diamond and Related Materials 5, 829-834
    • Chan, S. M. M., McKeag, R. D., Whitfield, M. D., Jackman, R. B. (1996). UV photodetectors from thin film diamond. Physica Status Solidi (A): Applied Research 154, 445-455
    • Chan, S. M. M., Raybould, F., Arthur, G., Goodall, F., Jackman, R. B. (1996). Laser projection patterning for the formation of thin film diamond microstructures. Diamond and Related Materials 5, 317-320
    • Foord, J. S., Loh, K. P., Singh, N. K., Jackman, R. B. (1996). Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors. Journal of Crystal growth 164, 208-213
    • Foord, J. S., Loh, K. P., Singh, N. K., Jackman, R. B. (1996). Growth studies of thin film diamond using molecular beam techniques. 5, 231-235
    • Jackman, R. (1996). 'Billion pound atoms'. Independent on Sunday
    • Jackman, R. B. (1996). Diamond detectors are blind to UV light. Optics and Laser Europe
    • Jackman, R. B. (1996). Diamonds sparkle in UV detection. Electronics Weekly
    • Jackman, R. B., Kingsley, C. R., Baral, B., Foord, J. S. (1996). Dopant incorporation mechanisms during the growth of thin film diamond. Diamond and Related Materials 5, 378-382
    • McKeag, R. D., Whitfield, M. D., Chan, S. M. M., Pang, L. Y., Jackman, R. B. (1996). A High Performance UV Photodetector from Thin Film Diamond. Proceedings of the 1995 MRS Fall Symposium; Boston, MA, USA; 27 November 1995 through 30 November 1995. ( Vol. 416 pp.419-424). Warrendale, US: Materials Research Society. Publisher URL
    • Whitfield, M. D., McKeag, R. D., Chan, S. M. M., Jackman, R. B. (1996). Thin film diamond photodiode for ultraviolet light detection. Applied Physics Letters 68, 290-292
    • Whitfield, M. D., Rodway, D., Savage, J. A., Foord, J. S., Jackman, R. B. (1996). Microwave plasma characteristics during bias-enhanced nucleation of diamond: An optical emission spectroscopic study. Journal of Applied Physics 80, 3710-3716

    1995

    • Beckman, J., Foord, J. S., Jackman, R. B. (1995). The growth of nucleation layers for high-quality diamond CVD from an r.f. plasma. Diamond and Related Materials 4, 735-739
    • Chan, S. M. M., Arthur, G., Goodall, F., Jackman, R. B. (1995). Thin Film Diamond Microstructures by Excimer Laser Projection Patterning. Diamond Films and Technology 5, 291-298
    • Chan, S. M. M., Peucheret, M., R D, J., C, C., P R, J., R, B. (1995). Aluminum and nickel contact metallizations on thin film diamond. Journal of Applied Physics 78, 2877-2880
    • Chua, L. H., Foord, J. S., Jackman, R. B. (1995). A route for the formation of CH2 species during diamond CVD. Diamond and Related Materials 4, 740-744
    • Jackman, R. B. (1995). Diamond based radiation detectors. Patent
    • Jackman, R. B., Beckman, J. F., J, S. (1995). Diamond chemical vapor deposition from a capacitively coupled radio frequency plasma. Applied Physics Letters 66, 1018-1020
    • Jackman, R. B., Beckman, J., Foord, J. S. (1995). Chemical vapour deposition of diamond from a novel capacitively coupled r.f. plasma source. Materials Science and Engineering: B 29, 216-219
    • Kingsley, C. J., Whitaker, T., Foord, J. S., Jackman, R. B. (1995). Development of chemical beam epitaxy for the deposition of gallium nitride. Materials Science and Engineering: B 29, 78-82
    • Koh, K. P., Kingsley, C. R., Foord, J. S., Jackman, R. B. (1995). The interaction of azomethane with Si(100). Surface Science 341, 92-1020
    • McKeag, R. D., Chan, S. M. M., Jackman, R. B. (1995). Polycrystalline diamond photoconductive device with high UV-visible discrimination. Applied Physics Letters 67, 2117-2119
    • McKeag, R. D., Chan, S. M. M., Johnston, C., Chalker, P. R., Jackman, R. B. (1995). High temperature stability of CVD Diamond diodes. Materials Science and Engineering: B 29, 223-227
    • McKeag, R. D., Chan, S. S. M., Johnson, C., Chalker, P. R., Jackman, R. B. (1995). High temperature stability of chemically vapour deposited diamond diodes. Materials Science and Engineering B 29(1-3), 223-227
    • Whitfield, M. D., Chan, S. S., Jackman, R. B. (1995). Thin film diamond photodiode for ultraviolet light detection. Applied Physics Letters , 290-290

    1994

    • Beckman, J., Jackman, R. B., Foord, J. S. (1994). Capacitively coupled r.f. plasma sources: a viable approach for CVD diamond growth? Diamond and Related Materials 3, 602-607
    • Chua, L. H., Foord, J. S., Jackman, R. B. (1994). The interaction of atomic hydrogen with adsorbed ethylene and acetylene on Si(100). Surface Science 315, 69-80
    • Chua, L. H., Jackman, R. B., Foord, J. S., Chalker, P. R., Johnston, C., Romani, S. (1994). Interaction of hydrogen with chemical vapor deposition diamond surfaces: A thermal desorption study. Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films 12(6), 3033-3039 doi:10.1116/1.578932.
    • Jackman, R. B., Chua, L. H., Kingsley, C. J., Foord, J. S. (1994). A comparative study of the adsorption of hot filament activated hydrocarbons on silicon, gallium arsenide and CVD diamond. 3, 706-710
    • Marshall, R. D., Jackman, R. B. (1994). Dry etching techniques for GaAs ultra-high vacuum chamber integrated processing. Microelectronic Engineering 25, 287-292

    1993

    • Beckman, J., Jackman, R. B. (1993). Chemical etching of GaAs with a novel low energy ion beam source : A low damage process for device fabrication. Vacuum 44, 257-261
    • Jackman, R. B. (1993). Ion beam-assisted etching of semiconductors: surface chemistry vs surface physics. Vacuum 44, 239-243
    • Jackman, R. B., Chua, L. H., Foord, J. S. (1993). Surface Spectroscopic Studies of the Initial Stages of Diamond Growth on Si(100). Chemical perspectives of microelectronic materials III: Symposium: Papers. ( Vol. 282 pp.677-682). Pittsburgh, US: Materials Research Society. Publisher URL
    • Jackman, R. B., Chua, L. H., Foord, J. S. (1993). The initial stages of diamond growth: an adsorption study of hot filament activated methane and hydrogen on Si( 100). Surface Science 292, 47-60
    • Jackman, R. B., Marshall, R. D. (1993). Surface Chemical Routes to Low Contamination Beam Assisted GaAs Etching. Beam solid interactions: fundamentals and applications; symposium held November 30 - December 4, 1992, Boston, Massachusetts, USA. ( Vol. 279 pp.587-592). Pittsburgh, US: Materials Research Society. Publisher URL
    • Marshall, R. D., Jackman, R. B. (1993). Novel precursors for chemically assisted ion beam etching : reactions of dichloroethane on GaAs (100). Vacuum 44, 249-256

    1992

    • Beckman, J., Jackman, R. B. (1992). Ultra-low damage chemical etching of GaAs with a novel ion beam source. Materials modification by energetic atoms and ions: Symposium held April 28-30, 1992, San Francisco, California, USA. ( Vol. 268 pp.35-40). Pittsburgh, US: Materials Research Society. Publisher URL
    • Chua, L. H., Jackman, R. B. (1992). Diamond-like carbon within microelectronics: Dielectric properties on silicon and GaAs. 1, 895-899
    • Marshall, R. D., Jackman, R. B. (1992). The role of ion beam assisted surface chemistry in etching: adsorption and reactions of alkyl halides. Materials modification by energetic atoms and ions: Symposium held April 28-30, 1992, San Francisco, California, USA. ( Vol. 268 pp.23-28). Pittsburgh, US: Materials Research Society. Publisher URL

    1991

    • Boyd, I. W., Jackman, R. B. (1991). Photochemical Processing of Electronic Materials. London: Academic Press.
    • Jackman, R. B. (1991). Photochemical etching of III-V Semiconductors. ( ). London: Academic Press.
    • Jackman, R. B., Tyrell, G. C., Marshall, D., French, C. L., Foord, J. S. (1991). . Materials Research Society Symposium Proceedings. ( Vol. 223 pp.215-).
    • Jackman, R. B., Tyrrell, G. C. (1991). Ion beam assisted etching of semiconductors: chemical modifications at the surface. 8th International Conference on Ion and Plasma Assisted Techniques. ( Vol. 8 pp.102-).
    • Tyrrell, G. C., Marshall, D., Beckham, J., Jackman, R. B. (1991). Chemical routes to GaAs etching with low energy ion beams. Journal of Physics: Condensed Matter 36, 179-

    1990

    • Jackman, R. B., Tyrrell, G. C. (1990). Ion beam enhanced reactions at the silicon-bromine interface: applicatation to electronic materials processing. Surface and Interface Analysis 16, 83-

    1989

    • Brown, M., Shiloh, M., Jackman, R. B., Boyd, I. W. (1989). Geometric optimisation for the deposition of high temperature superconductors. Applied Surface Science 43, 382-
    • Jackman, R. B., Price, R. J., Foord, J. S. (1989). Semiconductor surface etching by halogens; fundamental steps. Applied Surface Science 36, 296-
    • Tyrrell, G. C., Boyd, I. W., Jackman, R. B. (1989). Ion beam assisted etching of silicon with bromine. The role of the adsorbed state. Applied Surface Science 43, 439-
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