2016

• Wu, J., Jiang, Q., Chen, S., Tang, M., Mazur, Y.I., Maidaniuk, Y., Benamara, M., Semtsiv, M.P., Masselink, W.T., Sablon, K.A. and Salamo, G.J., 2016. Monolithically integrated InAs/GaAs quantum dot mid-infrared photodetectors on silicon substrates. ACS Photonics, 3(5), pp.749-753.
• Orchard, J.R., Shutts, S., Sobiesierski, A., Wu, J., Tang, M., Chen, S., Jiang, Q., Elliott, S., Beanland, R., Liu, H. and Smowton, P.M., 2016. In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates. Optics express, 24(6), pp.6196-6202.
• Tournié, E., Cerutti, L., Rodriguez, J.B., Liu, H., Wu, J. and Chen, S., 2016. Metamorphic III–V semiconductor lasers grown on silicon. MRS Bulletin, 41(03), pp.218-223.
• Onno, A.L., Wu, J., Jiang, Q., Chen, S., Tang, M., Maidaniuk, Y., ...Harder, N.P. (2016). 1.7eV Al0.2Ga0.8As solar cells epitaxially grown on silicon by SSMBE using a superlattice and dislocation filters.
• Natrella, M., Liu, C.P., Graham, C., Van Dijk, F., Liu, H., Renaud, C.C., Seeds, A.J. (2016). Accurate equivalent circuit model for millimetre-wave UTC photodiodes. Optics Express, 24 (5), 4698-4713. doi:10.1364/OE.24.004698
• Craig, A.P., Carrington, P.J., Liu, H., Marshall, A.R.J. (2016). Characterization of 6.1 angstrom III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy. JOURNAL OF CRYSTAL GROWTH, 435 56-61. doi:10.1016/j.jcrysgro.2015.11.025
• Wu, J., Ramsay, A., Sanchez, A., Zhang, Y., Kim, D., Brossard, F., ...Mazur, Y.I. (2016). Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate. Nano Letters, 16 (1), 504-511. doi:10.1021/acs.nanolett.5b04142
• Chen, S., Li, W., Wu, J., Jiang, Q., Tang, M., Shutts, S., ...Ross, I. (2016). Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photonics, doi:10.1038/nphoton.2016.21
• Lam, P., Wu, J., Tang, M., Kim, D., Hatch, S., Ramiro, I., ...Salamo, G.J. (2016). InAs/InGaP quantum dot solar cells with an AlGaAs interlayer. Solar Energy Materials and Solar Cells, 144 96-101. doi:10.1016/j.solmat.2015.08.031
• Zhang, Y., Sanchez, A.M., Sun, Y., Wu, J., Aagesen, M., Huo, S., ...Liu, H. (2016). Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires. Nano Letters, 16 (2), 1237-1243. doi:10.1021/acs.nanolett.5b04554
• Cheng, Y., Fukuda, M., Whiteside, V.R., Debnath, M.C., Vallely, P.J., Mishima, T.D., ...Liu, H.Y. (2016). Investigation of InAs/GaAs1-xSbx quantum dots for applications in intermediate band solar cells. Solar Energy Materials and Solar Cells, 147 94-100. doi:10.1016/j.solmat.2015.11.046
• Natrella, M., Liu, C.P., Graham, C., Van Dijk, F., Liu, H., Renaud, C.C., Seeds, A.J. (2016). Modelling and measurement of the absolute level of power radiated by antenna integrated THz UTC photodiodes. Optics Express, 24 (11), 11793-11807. doi:10.1364/OE.24.011793
• Kim, D., Tang, M., Wu, J., Hatch, S., Maidaniuk, Y., Dorogan, V., ...Liu, H. (2016). Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers. IEEE Journal of Photovoltaics, 6 (4), 906-911. doi:10.1109/JPHOTOV.2016.2547581
• Onno, A.L., Harder, N.P., Oberbeck, L., Liu, H. (2016). Simulation study of GaAsP/Si tandem cells including the impact of threading dislocations on the luminescent coupling between the cells.
• Onno, A., Harder, N.-.P., Oberbeck, L., Liu, H. (2016). Simulation study of GaAsP/Si tandem solar cells. Solar Energy Materials and Solar Cells, 145 206-216. doi:10.1016/j.solmat.2015.10.028

2015

• Wu, J., Ramsay, A., Sanchez, A.M., Zhang, Y., Kim, D., Brossard, F.S.F., Hu, X., Benamara, M., Ware, M.E., Mazur, Y.I. and Salamo, G.G., 2015. Defect-free self-catalyzed GaAs/GaAsP nanowire quantum dots grown on silicon substrate. Nano Letters.
• Ng, W.H., Podoliak, N., Horak, P., Wu, J., Liu, H., Stewart, W.J., Kenyon, A.J. (2015). Design and fabrication of suspended indium phosphide waveguides for MEMS-actuated optical buffering. IEEE Journal on Selected Topics in Quantum Electronics, 21 (4), doi:10.1109/JSTQE.2014.2384514
• Lam, P.M., Wu, J., Hatch, S., Kim, D., Tang, M., Liu, H., ...Allison, R. (2015). Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells. .IET OPTOELECTRONICS.9. doi:10.1049/iet-opt.2014.0079.
• Zhang, Y., Sanchez, A.M., Sun, Y., Wu, J., Aagesen, M., Huo, S., Kim, D., Jurczak, P., Xu, X. and Liu, H., 2015. Influence of Droplet Size on Growth of Self− Catalyzed Ternary GaAsP Nanowires. Nano letters.
• Jurczak, P., Onno, A., Sablon, K., Liu, H. (2015). Efficiency of GaInAs thermophotovoltaic cells: the effects of incident radiation, light trapping and recombinations. Optics Express, 23 (19), A1208. doi:10.1364/OE.23.0A1208
• Chen, S., Tang, M., Wu, J., Jiang, Q., Dorogan, V., Benamara, M., ...Liu, H. (2015). Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate. Photonics, 2 (2), 646-658. doi:10.3390/photonics2020646
• Tang, M., Chen, S., Wu, J., Jiang, Q., Kim, D., Seeds, A., Liu, H. (2015). Optimisation of 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates. .Journal of Physics: Conference Series.619. doi:10.1088/1742-6596/619/1/012011.
• Tang, M., Wu, J., Chen, S., Jiang, Q., Seeds, A.J., Liu, H., ...Salamo, G. (2015). Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. IET Optoelectronics, 9 (2), 61-64. doi:10.1049/iet-opt.2014.0078
• Zhang, Y., Sanchez, A.M., Wu, J., Aagesen, M., Holm, J.V., Beanland, R., ...Liu, H. (2015). Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III-V-V Ternary Core-Shell Nanowires. NANO LETTERS, 15 (5), 3128-3133. doi:10.1021/acs.nanolett.5b00188
• Wu, J., Chen, S., Seeds, A., Liu, H. (2015). Quantum dot optoelectronic devices: lasers, photodetectors and solar cells. Journal of Physics D: Applied Physics, 48 (36), doi:10.1088/0022-3727/48/36/363001
• Ramiro, I., Villa, J., Lam, P., Hatch, S., Wu, J., Lopez, E., ...Luque, A. (2015). Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS, 5 (3), 840-845. doi:10.1109/JPHOTOV.2015.2402439

2014

• Chen, S.M., Tang, M.C., Wu, J., Jiang, Q., Dorogan, V.G., Benamara, M., ...Liu, H. (2014). 1.3 mu m InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100 degrees C. Electronics Letters, 50 (20), 1467-1468. doi:10.1049/el.2014.2414
• Tang, M., Chen, S., Wu, J., Jiang, Q., Dorogan, V.G., Benamara, M., ...Liu, H. (2014). 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. Optics Express, 22 (10), 11528-11535. doi:10.1364/OE.22.011528
• Ward, T., Sanchez, A.M., Tang, M., Wu, J., Liu, H., Dunstan, D.J., Beanland, R. (2014). Design rules for dislocation filters. JOURNAL OF APPLIED PHYSICS, 116 (6), doi:10.1063/1.4892162
• Wu, J., Lee, A., Jiang, Q., Tang, M., Seeds, A.J., Liu, H. (2014). Electrically pumped continuous-wave 1.3-mu m InAs/GaAs quantum dot lasers monolithically grown on Si substrates. IET Optoelectronics, 8 (2), 20-24. doi:10.1049/iet-opt.2013.0093
• Jiang, Q., Tang, M., Chen, S., Wu, J., Seeds, A., Liu, H. (2014). InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate. Optics Express, 22 (19), 23242-23248. doi:10.1364/OE.22.023242
• Chen, S., Tang, M., Jiang, Q., Wu, J., Dorogan, V.G., Benamara, M., ...Seeds, A. (2014). InAs/GaAs Quantum-Dot Superluminescent Light-Emitting Diode Monolithically Grown on a Si Substrate. ACS Photonics, 1 (7), 638-642. doi:10.1021/ph500162a
• Hatch, S., Wu, J., Sablon, K., Lam, P., Tang, M., Jiang, Q., Liu, H. (2014). InAs/GaAsSb quantum dot solar cells. OPTICS EXPRESS, 22 (9), A679-A685. doi:10.1364/OE.22.00A679
• Sourribes, M.J.L., Isakov, I., Panfilova, M., Liu, H., Warburton, P.A. (2014). Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon. NANO LETTERS, 14 (3), 1643-1650. doi:10.1021/nl5001554
• Zhang, Y., Wu, J., Aagesen, M., Holm, J., Hatch, S., Tang, M., ...Liu, H. (2014). Self-Catalyzed Ternary Core–Shell GaAsP Nanowire Arrays Grown on Patterned Si Substrates by Molecular Beam Epitaxy. NANO LETTERS, 14 (8), 4542-4547. doi:10.1021/nl501565b
• Lam, P., Wu, J., Tang, M., Jiang, Q., Hatch, S., Beanland, R., ...Liu, H. (2014). Submonolayer InGaAs/GaAs quantum dot solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 126 83-87. doi:10.1016/j.solmat2014.03.046
• Lam, P., Hatch, S., Wu, J., Tang, M., Dorogan, V.G., Mazur, Y.I., ...Liu, H. (2014). Voltage recovery in charged InAs/GaAs quantum dot solar cells. Nano Energy, 6 159-166. doi:10.1016/j.nanoen.2014.03.016
• Wu, J., Li, Y., Kubota, J., Domen, K., Aagesen, M., Ward, T., ...Tang, M. (2014). Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core-shell nanowire photocathode on silicon substrates.. Nano Letters, 14 (4), 2013-2018. doi:10.1021/nl500170m

2013

• Tutu, F.K., Wu, J., Lam, P., Tang, M., Miyashita, N., Okada, Y., ...Liu, H. (2013). Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells. APPLIED PHYSICS LETTERS, 103 (4), doi:10.1063/1.4816503
• Sandall, I.C., Ng, J.S., David, J.P.R., Liu, H., Tan, C.H. (2013). Evaluation of InAs quantum dots on Si as optical modulator. Semiconductor Science and Technology, 28 (9), doi:10.1088/0268-1242/28/9/094002
• Lee, A., Jiang, Q., Wang, T., Tang, M., Seed, A., Liu, H. (2013). III-V Quantum Dot Laser Growth on Silicon and Germanium (Invited). .Optical Fiber Communication Conference, OFC 2013.
• Luxmoore, I.J., Toro, R., Del Pozo-Zamudio, O., Wasley, N.A., Chekhovich, E.A., Sanchez, A.M., ...Liu, H.Y. (2013). III-V quantum light source and cavity-QED on Silicon. SCIENTIFIC REPORTS, 3 doi:10.1038/srep01239
• Tutu, F.K., Lam, P., Wu, J., Miyashita, N., Okada, Y., Lee, K.-.H., ...Liu, H. (2013). InAs/GaAs quantum dot solar cell with an AlAs cap layer. APPLIED PHYSICS LETTERS, 102 (16), doi:10.1063/1.4803459
• Lee, A., Tang, M., Jiang, Q., Wu, J., Seeds, A., Liu, H. (2013). InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics (Invited). .2013 IEEE Photonics Conference, IPC 2013. doi:10.1109/IPCon.2013.6656643.
• Lee, A.D., Jiang, Q., Tang, M., Zhang, Y., Seeds, A.J., Liu, H. (2013). InAs/GaAs quantum-dot lasers monolithically grown on Si, Ge, and Ge-on-Si substrates. IEEE Journal on Selected Topics in Quantum Electronics, 19 (4), doi:10.1109/JSTQE.2013.2247979
• Zhang, Y., Aagesen, M., Holm, J.V., Jorgensen, H.I., Wu, J., Liu, H. (2013). Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy. NANO LETTERS, 13 (8), 3897-3902. doi:10.1021/nl401981u
• Lee, A., Liu, H., Seeds, A. (2013). Semiconductor III-V lasers monolithically grown on Si substrates. Semiconductor Science and Technology, 28 (1), doi:10.1088/0268-1242/28/1/015027
• Holm, J.V., Jørgensen, H.I., Krogstrup, P., Nygård, J., Liu, H., Aagesen, M. (2013). Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon. Nature Communications, 4 1498. doi:10.1038/ncomms2510

2012

• Sandall, I., Ng, J., David, J., Tan, C., Wang, T., Liu, H. (2012). 1300 nm wavelength InAs quantum dot photodetector grown on silicon. Optics Express, 20 (10), 10446-10452. doi:10.1364/OE.20.010446
• Pavarelli, N., Ochalski, T.J., Liu, H.Y., Gradkowski, K., Schmidt, M., Williams, D.P., ...Huyet, G. (2012). Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots. Applied Physics Letters, 101 (23), doi:10.1063/1.4769431
• Gradkowski, K., Ochalski, T.J., Pavarelli, N., Liu, H.Y., Tatebayashi, J., Williams, D.P., ...Huffaker, D.L. (2012). Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems. Physical Review B - Condensed Matter and Materials Physics, 85 (3), doi:10.1103/PhysRevB.85.035432
• Willis, S., Dimmock, J., Tutu, F., Liu, H., Peinado, M., Assender, H., ...Sellers, I. (2012). Defect mediatedextractioninInAs/GaAs quantum dot solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 102 142-147. doi:10.1016/j.solmat.2012.03.010
• Jr, C.O.D.D., Sercombe, D., Puebla, J., Otubo, L., Luxmoore, I.J., Sich, M., ...Skolnick, M.S. (2012). Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon. NANO LETTERS, 12 (10), 5269-5274. doi:10.1021/nl302490y
• Seeds, A.J., Rouvalis, E., Natrella, M., Liu, H., Chtioui, M., van Dijk, F., Carpintero, G. (2012). High efficiency THz photodetectors. European Conference on Integrated Optics .
• Tutu, F.K., Sellers, I.R., Peinado, M.G., Pastore, C.E., Willis, S.M., Watt, A.R., ...Liu, H.Y. (2012). Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer. JOURNAL OF APPLIED PHYSICS, 111 (4), doi:10.1063/1.3686184
• Zhou, K.J., Jiang, Q., Zhang, Z.Y., Chen, S.M., Liu, H.Y., Lu, Z.H., ...Hogg, R.A. (2012). Quantum dot selective area intermixing for broadband light sources. Optics Express, 20 (24), 26950-26957. doi:10.1364/OE.20.026950
• Wang, T., Lee, A., Tutu, F., Seeds, A., Liu, H., Jiang, Q., ...Hogg, R. (2012). The effect of growth temperature of GaAs nucleation layer on InAs/GaAs quantum dots monolithically grown on Ge substrates. Applied Physics Letters, 100 (5), doi:10.1063/1.3682314

2011

• Wang, T., Liu, H., Lee, A., Pozzi, F., Seeds, A. (2011). 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates. Optics Express, 19 (12), 11381. doi:10.1364/OE.19.011381
• Nuytten, T., Hayne, M., Bansal, B., LIU, H., Hopkinson, M., Moshchalkov, V. (2011). Charge separation and temperature-induced carrier migration in Ga1−xInxNyAs1−y multiple quantum wells. Physical Review B, 84 (4), doi:10.1103/PhysRevB.84.045302
• LIU, H., Wang, T., Jiang, Q., Hogg, R., Tutu, F., Pozzi, F., Seeds, A. (2011). Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nature Photonics, 5 416-419. doi:10.1038/nphoton.2011.120

2010

• Chen, R., LIU, H., Sun, H. (2010). Carrier Relaxation in InAs/InGaAs Dots-in-a-Well Structures. Japanese Journal of Applied Physics, 49 (2), 020203. doi:10.1143/JJAP.49.020203
• Chen, R., LIU, H., Sun, H. (2010). Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy. JOURNAL OF APPLIED PHYSICS, 107 (1), doi:10.1063/1.3277049
• Chen, R., LIU, H., Sun, H. (2010). Interband optical transitions of an InAs/InGaAs dots-in-a-well structure. SOLID STATE COMMUNICATIONS, 150 (15-16), 707-710. doi:10.1016/j.ssc.2010.01.042

2009

• Jang, Y.D., Park, J., Lee, D., Mowbray, D.J., Skolnick, M.S., Liu, H.Y., ...Hogg, R.A. (2009). Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots. APPLIED PHYSICS LETTERS, 95 (17), doi:10.1063/1.3255017
• Childs, D., Groom, K., Ray, S., LIU, H., Hopkinson, M., Hogg, R. (2009). Flat-topped emission centred at 1 250 nm from quantum dot superluminescent diodes. SOUTH AFRICAN JOURNAL OF SCIENCE, 105 (7-8), 276-277.
• Zibik, E.A., Grange, T., Carpenter, B.A., Porter, N.E., Ferreira, R., Bastard, G., ...LIU, H. (2009). Long lifetimes of quantum-dot intersublevel transitions in the terahertz range. Nature Materials, 8 (10), 803-807. doi:10.1038/nmat2511
• Nabavi, E., Badcock, T.J., Nuytten, T., Liu, H.Y., Hopkinson, M., Moshchalkov, V.V., Mowbray, D.J. (2009). Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots. JOURNAL OF APPLIED PHYSICS, 105 (5), doi:10.1063/1.3082012
• Ramsay, A.J., Boyle, S.J., Godden, T.M., Kolodka, R.S., Khatab, A.F.A., Oliveira, J.B.B., ...Fox, A.M. (2009). Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole. SOLID STATE COMMUN, 149 (35-36), 1458-1465. doi:10.1016/j.ssc.2009.04.043